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MCR8SD 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 MCR8SD은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 MCR8SD 자료 제공

부품번호 MCR8SD 기능
기능 (MCR8Sx) Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
제조업체 ON Semiconductor
로고 ON Semiconductor 로고


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MCR8SD 데이터시트, 핀배열, 회로
www.DataSheet4U.com
MCR8SD, MCR8SM, MCR8SN
Preferred Device
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features
Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits
Blocking Voltage to 800 Volts
On−State Current Rating of 8 Amperes RMS at 80°C
High Surge Current Capability − 80 Amperes
Rugged, Economical TO−220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
Immunity to dv/dt − 5 V/msec Minimum at 110°C
Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR8SD
MCR8SM
MCR8SN
VDRM,
VRRM
400
600
800
V
On-State RMS Current
(180° Conduction Angles; TC = 80°C)
IT(RMS)
8.0
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = 110°C)
Circuit Fusing Consideration (t = 8.33 ms)
ITSM
I2t
80
26.5
A
A2sec
Forward Peak Gate Power
(Pulse Width 1.0 ms, TC = 80°C)
PGM 5.0 W
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width 1.0 ms, TC = 80°C)
IGM 2.0 A
Operating Junction Temperature Range
TJ −40 to 110 °C
Storage Temperature Range
Tstg −40 to 150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 3
1
http://onsemi.com
SCRs
8 AMPERES RMS
400 thru 800 VOLTS
G
AK
MARKING
DIAGRAM
1
23
TO−220AB
CASE 221A−09
STYLE 3
AY WW
MCR8SxG
AKA
A
Y
WW
x
G
AKA
= Assembly Location
= Year
= Work Week
= D, M, or N
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
Device
MCR8SD
MCR8SDG
MCR8SM
MCR8SMG
MCR8SN
Package
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
MCR8SNG
TO−220AB
(Pb−Free)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR8S/D




MCR8SD pdf, 반도체, 판매, 대치품
MCR8SD, MCR8SM, MCR8SN
1000
100
10
1
−40 −25 −10 5 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 5. Typical Holding Current versus
Junction Temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
−40 −25 −10 5 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
1000
100
10
1
−40 −25 −10 5 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 7. Typical Latching Current versus
Junction Temperature
http://onsemi.com
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관련 데이터시트

부품번호상세설명 및 기능제조사
MCR8S

Silicon Controlled Rectifiers

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Motorola Semiconductors
MCR8SD

(MCR8Sx) Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

ON Semiconductor
ON Semiconductor

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