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PDF MMBD452LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBD452LT1 | |
| Descripción | Dual Hot-Carrier Diodes | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Dual Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high–efficiency UHF and VHF detector
applications. They are readily adaptable to many other fast switching RF and digital
applications. They are supplied in an inexpensive plastic package for low–cost,
high–volume consumer and industrial/commercial requirements.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance
• Low Reverse Leakage
MMBD452LT1
Motorola Preferred Devices
30 VOLTS
DUAL HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR
PF
30 Volts
225 mW
1.8 mW/°C
Operating Junction
Temperature Range
TJ °C
– 55 to +125
Storage Temperature Range
DEVICE MARKING
Tstg
– 55 to +150
°C
MMBD452LT1 = 5N
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Reverse Breakdown Voltage (IR = 10 µA)
Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1
Reverse Leakage (VR = 25 V) Figure 3
Forward Voltage (IF = 1.0 mAdc) Figure 4
Forward Voltage (IF = 10 mAdc) Figure 4
V(BR)R
CT
IR
VF
VF
30
—
—
—
—
3
1
2
CASE 318 – 08, STYLE 11
SOT– 23 (TO – 236AB)
1
ANODE
2
CATHODE
3
CATHODE/ANODE
Typ Max Unit
— — Volts
0.9 1.5 pF
13 200 nAdc
0.38 0.45 Vdc
0.52 0.6 Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5–103
1 page | ||
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| PDF Descargar | [ Datasheet MMBD452LT1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MMBD452LT1 | DUAL HOT-CARRIER DETECTOR AND SWITCHING DIODES |  ON |
| MMBD452LT1 | Dual Hot-Carrier Diodes | Motorola Semiconductors |
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