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PDF MMBV409LT1 Data sheet ( Hoja de datos )

Número de pieza MMBV409LT1
Descripción Silicon Tuning Diode
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MMBV409LT1
Preferred Device
Silicon Tuning Diode
This device is designed in the Surface Mount package for general
frequency control and tuning applications. It provides solid−state
reliability in replacement of mechanical tuning methods.
Features
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
Available in Surface Mount Package
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current
Forward Power Dissipation @ TA = 25°C
Derate above 25°C
VR
IF
PD
20 Vdc
200 mAdc
225 mW
1.8 mW/°C
Junction Temperature
TJ
+125
°C
Storage Temperature Range
Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
3
Cathode
1
Anode
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 8
MARKING DIAGRAM
X5 M G
G
1
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
X5 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBV409LT1
SOT−23 3,000 / Tape & Reel
MMBV409LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MMBV409LT1/D

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