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PDF MMBV809LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBV809LT1 | |
| Descripción | Silicon Tuning Diode | |
| Fabricantes | ETL | |
| Logotipo |  |
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Silicon Tuning Diode
This device is designed for 900 MHz frequency control
and tuning applications. It provides solid–state reliability in
replacement of mechanical tuning methods.
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
• Available in 8 mm Tape and Reel
1
ANODE
(3
CATHODE
MMBV809LT1
3
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol
Reverse Voltage
Forward Current
Device Dissipation(1) @T A = 25°C
Derate above 25°C
VR
IF
PD
Junction Temperature
Storage Temperature Range
TJ
T stg
Value
20
20
225
1.8
+125
–55 to +150
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
DEVICE MARKING
MMBV809LT1=5K
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR=10µAdc)
Reverse Voltage Leakage Current
(VR=15Vdc)
V (BR)R
IR
Min
20
—
Max
—
50
Unit
Vdc
nAdc
Device Type
CTDiode Capacitance
VR=2.0Vdc,f=1.0MHz
pF
Q,Figure of Merit
VR=3.0Vdc
f=500MHz
CR,Capacitance Ratio
C2/C8
f=1.0MHz(2)
Min Typ
Max
Typ
MMBV809LT1
4.5 5.3
6.1
75
1. FR-5 Board 1.0 x 0.75 x 0.62 in.
2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 vdc
Min Max
1.8 2.6
I5–1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMBV809LT1.PDF ] | |
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