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PDF MV409 Data sheet ( Hoja de datos )
| Número de pieza | MV409 | |
| Descripción | Silicon Tuning Diode | |
| Fabricantes | ETL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MV409 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Silicon Tuning Diode
This device is designed in the surface Mount package for general frequency
control and tuning applications.It provides solid-state reliability in replacement of
mechanical tuning methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
3
CATHODE
1
ANODE
MMBV409LT1
MV409
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol M B V 4 0 9 MMBV409LT1 Unit
Reverse Voltage
Forward Current
Device Dissipation @T A = 25°C
Derate above 25°C
V R 20 20 Vdc
I F 200 200 mAdc
P D 280 225 mW
2.8 1.8 mW/°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
TJ
+125
°C
T stg –55 to +150 °C
MMBV409LT1=X5,MV409=MV409
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Reverse Breakdown Voltage
(IR=10µAdc)
Reverse Voltage Leakage Current
(VR=15Vdc)
Diode Capacitance Temperature Coefficient
V (BR)R
IR
T CC
20
—
—
—
—
300
Max
—
0.1
—
Unit
Vdc
µAdc
ppm/°C
Device Type
CTDiode Capacitance
VR=3.0Vdc,f=1.0MHz
pF
Q,Figure of Merit
C ,Capacitance
R
Ratio
VR=3.0Vdc
f=50MHz
C3/C8
f=1.0MHz(1)
Min N o m Max
MMBV409LT1,MV409
26
29 32
Min Min
200 1.5
Max
1.9
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 vdc
I2–1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MV409.PDF ] | |
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