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PDF MPS8098 Data sheet ( Hoja de datos )

Número de pieza MPS8098
Descripción (MPS8098 / MPS8099) Amplifier Transistors Voltage and Current are Negative
Fabricantes ON Semiconductor 
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(NPN) MPS8098, MPS8099*,
(PNP) MPS8598, MPS8599*
*Preferred Devices
Amplifier Transistors
Voltage and Current are Negative
for PNP Transistors
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
MPS8098, MPS8598
MPS8099, MPS8599
VCEO
Value
60
80
Unit
Vdc
Collector −Base Voltage
VCBO
Vdc
MPS8098, MPS8598
60
MPS8099, MPS8599
80
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
4.0 Vdc
500 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
(Note 1)
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. RqJA is measured with the device soldered into a typical printed circuit board.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 5
1
http://onsemi.com
NPN
COLLECTOR
3
2
BASE
1
EMITTER
STYLE 1
MPS8098,
MPS8099
PNP
COLLECTOR
3
2
BASE
1
EMITTER
STYLE 1
MPS8598,
MPS8599
TO−92
CASE 29−11
1
2
STYLE 1
3
MARKING DIAGRAM
MPS
8x9y
AYWW G
G
MPS8x9y = Device Code
x = 0 or 5
y = 8 or 9
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MPS8098/D

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MPS8098 pdf
(NPN) MPS8098, MPS8099*, (PNP) MPS8598, MPS8599*
1.0
TJ = 25°C
NPN
0.8
VBE(sat) @ IC/IB = 10
0.6 VBE @ VCE = 5.0 V
0.4
1.0
TJ = 25°C
PNP
0.8
VBE(sat) @ IC/IB = 10
0.6 VBE @ VCE = 5.0 V
0.4
0.2
0
0.2
VCE(sat) @ IC/IB = 10
0.5 1.0 2.0 5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 13. MPS8098/99 “ON” Voltages
0.2
0
0.2
VCE(sat) @ IC/IB = 10
0.5 1.0 2.0 5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 14. MPS8598/99 “ON” Voltages
2.0 2.0
TJ = 25°C
1.6
IC = IC =
20 mA 50 mA
IC =
100 mA
IC =
200 mA
1.6
IC =
10 mA
IC =
20 mA
IC =
50 mA
IC = IC =
100 mA 200 mA
1.2 1.2
0.8 0.8
0.4
IC =
10 mA
0
0.02 0.05
0.1
0.2
0.5 1.0 2.0
5.0 10 20
IB, BASE CURRENT (mA)
Figure 15. MPS8098/99 Collector Saturation Region
0.4
TJ = 25°C
0
0.02 0.05 0.1
0.2
0.5 1.0 2.0
5.0 10 20
IB, BASE CURRENT (mA)
Figure 16. MPS8598/99 Collector Saturation Region
−1.0 −1.0
−1.4 −1.4
−1.8
RqVB FOR VBE
−2.2
−55°C TO 125°C
−1.8 RqVB FOR VBE
−55°C TO 125°C
−2.2
−2.6 −2.6
−3.0
0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 17. MPS8098/99 Base−Emitter
Temperature Coefficient
−3.0
0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 18. MPS8598/99 Base−Emitter
Temperature Coefficient
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