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Datasheet 2SK303 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12SK303Low-Frequency General-Purpose Amp Applications

Sanyo Semicon Device
Sanyo Semicon Device
mosfet
22SK303Silicon N Channel Junction FETs

Silicon N Channel Junction FETs 2SK303 LH03 series of products interconvertible 2SK303 Applications For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC, electronic switch. Electrical characteristics (Ta=25℃) D Symbol SG Packag 1-Source 2-Drain 3-Gate SOT-23
Ke sai lun Elctronic
Ke sai lun Elctronic
mosfet
32SK303JFET

UNISONIC TECHNOLOGIES CO., LTD 2SK303 LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS  FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion JFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free
Unisonic Technologies
Unisonic Technologies
mosfet
42SK303N-Channel Junction Silicon FET

SMD Type N-Channel Junction Silicon FET 2SK303 Junction FET Features Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and +0.1 2.4-0.1 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm impedance conversion. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0
Kexin
Kexin
mosfet
52SK303N-Channel Junction Silicon FET

SMD Type Product specification 2SK303 Features Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and +0.1 2.4-0.1 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm impedance conversion. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1
TY Semiconductor
TY Semiconductor
mosfet


2SK Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
12SK0065Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu
Panasonic Semiconductor
Panasonic Semiconductor
mosfet
22SK0123Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚ Unit: mm 0.40+0.10 �
Panasonic Semiconductor
Panasonic Semiconductor
mosfet
32SK0198Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification 0.40+0.10 –0.05 Unit: mm 0.16+0.10 –0.06 s Features q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion t
Panasonic Semiconductor
Panasonic Semiconductor
mosfet
42SK0301Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal) 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching 5.0±0.2 5.1±0.2 4.0±0.2 unit: mm I Features 13.5±0.5 G Low noies, high gain G High gate to drain voltage VGDO 0.45 –0.1 +0.2 0.45 –0.1 +0.2 I Absolute
Panasonic Semiconductor
Panasonic Semiconductor
mosfet
52SK0601Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal) 2SK601 Silicon N-Channel MOS FET For switching unit: mm s Features q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape
Panasonic Semiconductor
Panasonic Semiconductor
mosfet
62SK0614Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal) 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm I Features 5.0±0.2 4.0±0.2 0.7±0.1 0.7±0.2 12.9±0.5 G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL I Absolute Maximum Ratings (Ta = 25°
Panasonic Semiconductor
Panasonic Semiconductor
mosfet
72SK0615SILICON N-CHANNEL MOS FET

Silicon MOS FETs (Small Signal) 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm I Features 2.0±0.2 G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone
Panasonic Semiconductor
Panasonic Semiconductor
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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