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Datasheet 2SK303 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2SK303 | Low-Frequency General-Purpose Amp Applications | Sanyo Semicon Device | mosfet |
2 | 2SK303 | Silicon N Channel Junction FETs Silicon N Channel Junction FETs 2SK303
LH03 series of products interconvertible
2SK303
Applications For charge sensor, meter amplifier circuit,
rheostat , chopper and gain controller for AGC, electronic switch.
Electrical characteristics (Ta=25℃)
D Symbol SG
Packag
1-Source 2-Drain 3-Gate SOT-23 | Ke sai lun Elctronic | mosfet |
3 | 2SK303 | JFET UNISONIC TECHNOLOGIES CO., LTD 2SK303
LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS
FEATURES
* Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion
JFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free | Unisonic Technologies | mosfet |
4 | 2SK303 | N-Channel Junction Silicon FET SMD Type
N-Channel Junction Silicon FET 2SK303
Junction FET
Features
Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and
+0.1 2.4-0.1
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
impedance conversion.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0 | Kexin | mosfet |
5 | 2SK303 | N-Channel Junction Silicon FET SMD Type
Product specification
2SK303
Features
Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and
+0.1 2.4-0.1
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
impedance conversion.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1 | TY Semiconductor | mosfet |
2SK Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2SK0065 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone
4.0±0.2 2.0±0.2 (0.8) 3.0±0.2
unit: mm
I Features
G Diode is connected between gate and source G Low noise voltage
I Absolute Maximu Panasonic Semiconductor mosfet | | |
2 | 2SK0123 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0123 (2SK123)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone s Features
q High mutual conductance gm q Low noise voltage of NV
1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚
Unit: mm
0.40+0.10 � Panasonic Semiconductor mosfet | | |
3 | 2SK0198 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
0.40+0.10 –0.05
Unit: mm
0.16+0.10 –0.06
s Features
q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion t Panasonic Semiconductor mosfet | | |
4 | 2SK0301 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification For switching
5.0±0.2 5.1±0.2 4.0±0.2
unit: mm
I Features
13.5±0.5
G Low noies, high gain G High gate to drain voltage VGDO
0.45 –0.1
+0.2
0.45 –0.1
+0.2
I Absolute Panasonic Semiconductor mosfet | | |
5 | 2SK0601 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
unit: mm
s Features
q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape Panasonic Semiconductor mosfet | | |
6 | 2SK0614 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
unit: mm
I Features
5.0±0.2
4.0±0.2
0.7±0.1
0.7±0.2 12.9±0.5
G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL
I Absolute Maximum Ratings (Ta = 25° Panasonic Semiconductor mosfet | | |
7 | 2SK0615 | SILICON N-CHANNEL MOS FET Silicon MOS FETs (Small Signal)
2SK0615 (2SK615)
Silicon N-Channel MOS FET
For switching
Unit: mm
I Features
2.0±0.2
G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone Panasonic Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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