Datasheet 7N60 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	7N60	N-CHANNEL MOSFET 7N60(F,B,H) 7A mps,600 Volts N-CHANNEL MOSFET FEATURE  7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 7N60 ITO-220AB 7N60F TO-263 7N60B TO-262 7N60H Absolute Maximum Ratings(TC=25℃,u	CHONGQING PINGYANG	mosfet
2	7N60	N-Channel Power MOSFET, Transistor SEMICONDUCTOR 7N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (7A, 600Volts) DESCRIPTION The Nell 7N60 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. thres	nELL	mosfet
3	7N60	N-Channel Power MOSFET, Transistor Shenzhen yecheng technology industry co.,ltd 7N60 N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed	yecheng technology	mosfet
4	7N60	N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 7N60 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Th	Unisonic Technologies	mosfet
5	7N60	N-CHANNEL MOSFET KIA SEMICONDUCTORS 600V N-CHANNEL MOSFET 7N60 1.Description The KIA7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually use	KIA	mosfet

7N6 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	7N60	N-CHANNEL MOSFET 7N60(F,B,H) 7A mps,600 Volts N-CHANNEL MOSFET FEATURE  7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 7N60 ITO-220AB 7N60F TO-263 7N60B TO-262 7N60H Absolute Maximum Ratings(TC=25℃,u	CHONGQING PINGYANG	mosfet
2	7N60	N-Channel Power MOSFET, Transistor SEMICONDUCTOR 7N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (7A, 600Volts) DESCRIPTION The Nell 7N60 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. thres	nELL	mosfet
3	7N60	N-Channel Power MOSFET, Transistor Shenzhen yecheng technology industry co.,ltd 7N60 N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed	yecheng technology	mosfet
4	7N60	N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 7N60 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Th	Unisonic Technologies	mosfet
5	7N60	N-CHANNEL MOSFET KIA SEMICONDUCTORS 600V N-CHANNEL MOSFET 7N60 1.Description The KIA7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually use	KIA	mosfet
6	7N60-F	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 7N60-F 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics	Unisonic Technologies	mosfet
7	7N60-M	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 7N60-M 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics	Unisonic Technologies	mosfet

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Número de pieza	Descripción	Fabricantes	PDF
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