|
|
PDF P60N05 Data sheet ( Hoja de datos )
| Número de pieza | P60N05 | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de P60N05 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
TYPE
STP60N05-14
STP60N06-14
STP60N05-14
STP60N06-14
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
VDSS
50 V
60 V
RDS(on)
< 0.014 Ω
< 0.014 Ω
ID
60 A
60 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.012 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175 oC OPERATING TEMPERATURE
s VERY LOW RDS (on)
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-Source Voltage (Vgs = 0)
VDGR Drain-Gate Voltage (Rgs = 20 KΩ)
VGS Gate-Source Voltage
ID Drain-Current (continuous) at Tc = 25oC
ID Drain-Current (continuous) at Tc = 100oC
IDM(•) Drain-Current (Pulsed)
Ptot Total Dissipation at Tc = 25oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max Operating Junction Temperature
(•)Pulse width limited by safe operating area
March 1996
Value
STP60N05-14
STP60N06-14
50 60
50 60
± 20
60
50
240
150
1
-
-65 to 175
175
Unit
V
V
V
A
A
A
W/oC
oC
V
oC
oC
1/5
1 page  
STP60N05-14/STP60N06-14
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
...
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet P60N05.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| P60N03L | EQP60N03L |  Fairchild Semiconductor |
| P60N03LDG | N-Channel Logic Level Enhancement Mode Field Effect Transistor |  NIKO-SEM |
| P60N05 | N-CHANNEL Power MOSFET | ST Microelectronics |
| P60N05-16 | STP60N05-16 | ST Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |