|
|
|
부품번호 | US108S 기능 |
|
|
기능 | SCRs | ||
제조업체 | Unisonic Technologies | ||
로고 | |||
UTC US108S/N
SCRs
DESCRIPTION
The UTC US108S/N is suitable to fit all modes of
control, found in applications such as overvoltage
crowbar protection, motor control circuits in power
tools and kitchen aids, inrush current limiting circuits,
capacitive discharge ignition and voltage regulation
circuits.
1
SCR
TO-220
1: CATHODE 2: ANODE 3: GATE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak off-state voltages
www.DataSheet4U.com
US108S/N-4
US108S/N-6
US108S/N-8
RMS on-state current (180° conduction angle) (Tc = 110°C)
Average on-state current (180° conduction angle) (Tc = 110°C)
Non repetitive surge peak on-state current (Tj = 25°C)
tp=8.3ms
tp=10ms
I²t Value for fusing (tp = 10 ms ,Tj = 25°C)
Critical rate of rise of on-state current
(IG = 2 x IGT , tr ≤ 100 n s, Tj = 125°C, F = 60 Hz)
Peak gate current (tp=20µs, Tj = 125°C)
Maximum peak reverse gate voltage
Average gate power dissipation (Tj = 125°C)
Storage junction temperature range
Operating junction temperature range
SYMBOL
VDRM
VRRM
IT(RMS)
IT(AV)
RATING
US108S US108N
400
600
800
8
5
UNIT
V
A
A
ITSM
I²t
dI/dt
IGM
VRGM
PG(AV)
Tstg
Tj
73 100
70 95
24.5 45
50
4
5
1
-40 ~ +150
-40 ~ +125
A
A²S
A/µs
A
V
W
°C
°C
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R301-012,B
UTC US108S/N
SCR
Fig.6: Relative variation of dV/dt immunity vs gate-
cathode resistance(typical values) (US108S)
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
10.00
Tj=125℃
VD=0.67* VDRM
1.00
Fig.7: Relative variation of dV/dt immunity vs gate-
cathode resistance(typical values) (US108S)
15.0 dV/dt(Cgk)/dV/dt(Rgk=220Ω)
Tj=125℃
12.5 VD=0.67* VDRM
Rgk=220Ω
10.0
7.5
0.10
5.0
0.01
0
Rgk(Ω)
200 400 600 800 1000 1200 1400 1600 1800 2000
2.5
Cgk(nF)
0.0
0 20 40 60 80 100 120 140 160 180 200 220
Figure.8: Surge peak on-state current vs
number of cycles.
ITSM(A)
100
90
80 US108N
tp=10ms
One cycle
70 Non repetitive
60 Tj Iinitial=25℃
50 US108S
40 Repetitive
30 Tcase=110℃
20
10 Number of cycles
0
1 10
100
Fig.9:Non-repetitive surge peak on-state current for a
sinusoidal pulse with width tp<10ms, and corresponding
ITSM(A),I2t(A2s) values of I 2t.
1000
Tjinitial=25℃
1000
100
10
0.01
dI/dt
limitation
ITSM
US108N
US108S
I2 t
tp(ms)
US108N
US108S
0.10 1.00
10.00
Fig.10: On-state characteristics(maximum values).
ITM(A)
50.0
Tj=max:
Vto=0.85V
10.0 Rd=46mΩ
Tj=Tjmax.
1.0 Tj=25℃
0.1
0.0
VTM(V)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R301-012,B
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ US108S.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
US108N | SCRs | Unisonic Technologies |
US108S | SCRs | Unisonic Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |