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PDF STP140NF55 Data sheet ( Hoja de datos )
| Número de pieza | STP140NF55 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
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STB140NF55
STP140NF55
N-CHANNEL 55V - 0.0065 Ω - 80A TO-220/D²PAK
STripFET™ II POWER MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
STB140NF55
STP140NF55
55 V
55 V
< 0.008 Ω
< 0.008 Ω
■ TYPICAL RDS(on) = 0.0065 Ω
ID
80 A
80 A
Figure 1:Package
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
APPLICATIONS
■ MOTOR CONTROL
■ HIGH CURRENT, SWITCHING
APPLICATIONS
■ AUTOMOTIVE ENVIRONMENT
Figure 2: Internal Schematic Diagram
www.DataSheet4U.com
Table 2: Order Codes
Part Number
STB140NF55T4
STP140NF55
MARKING
B140NF55
P140NF55
Table 3:ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID
IDM(•)
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
EAS(2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
December 2004
PACKAGE
D²PAK
TO-220
PACKAGING
TAPE & REEL
TUBE
Value
55
± 20
80
80
320
300
2
10
1.3
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD ≤80A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 40A, VDD = 30V
Rev. 2
1/11
1 page  
Figure 11: Normalized Gate Threshold Voltage vs
Temperature
STB140NF55 STP140NF55
Figure 12: Normalized on Resistance vs Temperature
Figure 13: Source-drain Diode Forward
Characteristics
Figure 14: Normalized Breakdown Voltage vs
Temperature.
.
.
.
.
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5 Page 
STB140NF55 STP140NF55
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
All other names are the property of their respective owners.
© 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America.
www.st.com
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