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PDF MC33153 Data sheet ( Hoja de datos )
| Número de pieza | MC33153 | |
| Descripción | Single IGBT Gate Driver | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MC33153 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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MC33153
Single IGBT Gate Driver
The MC33153 is specifically designed as an IGBT driver for high
power applications that include ac induction motor control, brushless
dc motor control and uninterruptable power supplies. Although
designed for driving discrete and module IGBTs, this device offers a
cost effective solution for driving power MOSFETs and Bipolar
Transistors. Device protection features include the choice of
desaturation or overcurrent sensing and undervoltage detection. These
devices are available in dual−in−line and surface mount packages.
Features
• High Current Output Stage: 1.0 A Source/2.0 A Sink
• Protection Circuits for Both Conventional and Sense IGBTs
• Programmable Fault Blanking Time
• Protection against Overcurrent and Short Circuit
• Undervoltage Lockout Optimized for IGBT’s
• Negative Gate Drive Capability
• Cost Effectively Drives Power MOSFETs and Bipolar Transistors
• Pb−Free Packages are Available
http://onsemi.com
MARKING
DIAGRAMS
8
SOIC−8
33153
D SUFFIX
ALYW
1 CASE 751
G
1
8
PDIP−8
P SUFFIX
CASE 626
MC33153P
AWL
YYWWG
11
VCC
Fault
Output 7
VEE
Short Circuit
Latch S
Q
R
Overcurrent
Latch S
Q
R
VCC
Input
4
VEE
VCC
6
VCC
Short Circuit
Comparator
Overcurrent
Comparator
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130 mV
VCC
Current
Sense
1 Input
A = Assembly Location
L, WL = Wafer Lot
Y, YY = Year
W, WW = Work Week
G or G = Pb−Free Package
(Note: Microdot may be in either location)
65 mV
VCC
270 mA
Fault Blanking/
Desaturation
Comparator
6.5 V
VEE Kelvin
VCC 2 GND
Fault
8 Blanking/
Desaturation
Input
VEE
PIN CONNECTIONS
Current Sense
Input
1
Kelvin GND 2
VEE 3
8
Fault Blanking/
Desaturation Input
7 Fault Output
6 VCC
VCC
Under
Voltage
Lockout
VCC
Output
Stage
100 k
Drive
5 Output
VEE
Input 4
5 Drive Output
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
12 V/
11 V
3 VEE
This device contains 133 active transistors.
Figure 1. Representative Block Diagram
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 5
1
Publication Order Number:
MC33153/D
1 page  
MC33153
16
14 VCC = 15 V
VPin 4 = 0 V
12 VPin 8 > 7.0 V
10 TA = 25°C
8.0
6.0
4.0
2.0
0
50 55 60 65 70 75 80
VPin 1, CURRENT SENSE INPUT VOLTAGE (mV)
Figure 10. Drive Output Voltage
versus Current Sense Input Voltage
14
12
10
8.0
6.0
4.0
2.0
0
100
VCC = 15 V
VPin 4 = 0 V
VPin 8 > 7.0 V
TA = 25°C
110 120 130 140 150
VPin 1, CURRENT SENSE INPUT VOLTAGE (mV)
Figure 11. Fault Output Voltage
versus Current Sense Input Voltage
160
70
68 VCC = 15 V
66
64
62
60
−60 −40 −20 0 20 40 60 80 100 120 140
TA, AMBIENT TEMPERATURE (°C)
Figure 12. Overcurrent Protection Threshold
Voltage versus Temperature
70
68 TA = 25°C
66
64
62
60
12 14 16 18 20
VCC, SUPPLY VOLTAGE (V)
Figure 13. Overcurrent Protection Threshold
Voltage versus Supply Voltage
135 135
VCC = 15 V
TA = 25°C
130 130
125
−60 −40 −20 0 20 40 60 80 100 120 140
TA, AMBIENT TEMPERATURE (°C)
Figure 14. Short Circuit Comparator Threshold
Voltage versus Temperature
125
12 14 16 18 20
VCC, SUPPLY VOLTAGE (V)
Figure 15. Short Circuit Comparator Threshold
Voltage versus Supply Voltage
http://onsemi.com
5
5 Page 
MC33153
APPLICATION INFORMATION
Figure 35 shows a basic IGBT driver application. When
driven from an optoisolator, an input pull up resistor is
required. This resistor value should be set to bias the output
transistor at the desired current. A decoupling capacitor
should be placed close to the IC to minimize switching noise.
A bootstrap diode may be used for a floating supply. If the
protection features are not required, then both the Fault
Blanking/Desaturation and Current Sense Inputs should
both be connected to the Kelvin Ground (Pin 2). When used
with a single supply, the Kelvin Ground and VEE pins should
be connected together. Separate gate resistors are
recommended to optimize the turn−on and turn−off drive.
blanking capacitor should be connected from the
Desaturation pin to the VEE pin. If a dual supply is used, the
blanking capacitor should be connected to the Kelvin
Ground. The Current Sense Input should be tied high
because the two comparator outputs are ANDed together.
Although the reverse voltage on collector of the IGBT is
clamped to the emitter by the free−wheeling diode, there is
normally considerable inductance within the package itself.
A small resistor in series with the diode can be used to
protect the IC from reverse voltage transients.
18 V
18 V
Bootstrap
7
Fault
6
VCC Desat/ 8
Blank
5
Output
MC33153
4
Input
1
Sense
VEE GND 2
3
B+
7
Fault
6
VCC Desat/ 8
Blank
MC33153
5
Output
4
Input
1
Sense
VEE GND 2
3
CBlank
Figure 37. Desaturation Application
Figure 35. Basic Application
15 V
7
Fault
6
VCC Desat/ 8
Blank
5
Output
MC33153
4
Input
1
Sense
VEE GND 2
3
When using sense IGBTs or a sense resistor, the sense
voltage is applied to the Current Sense Input. The sense trip
voltages are referenced to the Kelvin Ground pin. The sense
voltage is very small, typically about 65 mV, and sensitive
to noise. Therefore, the sense and ground return conductors
should be routed as a differential pair. An RC filter is useful
in filtering any high frequency noise. A blanking capacitor
is connected from the blanking pin to VEE. The stray
capacitance on the blanking pin provides a very small level
of blanking if left open. The blanking pin should not be
grounded when using current sensing, that would disable the
sense. The blanking pin should never be tied high, that
would short out the clamp transistor.
18 V
−5.0 V
Figure 36. Dual Supply Application
When used in a dual supply application as in Figure 36, the
Kelvin Ground should be connected to the emitter of the
IGBT. If the protection features are not used, then both the
Fault Blanking/Desaturation and the Current Sense Inputs
should be connected to Ground. The input optoisolator
should always be referenced to VEE.
If desaturation protection is desired, a high voltage diode
is connected to the Fault Blanking/Desaturation pin. The
7
Fault
6
VCC Desat/ 8
Blank 5
Output
MC33153
1
Sense
4
Input
VEE
GND 2
3
Figure 38. Sense IGBT Application
http://onsemi.com
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MC33153.PDF ] | |
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