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MC33172 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 MC33172은 전자 산업 및 응용 분야에서
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부품번호 MC33172 기능
기능 (MC33171 - MC33174) Low Power Operational Amplifiers
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MC33172 데이터시트, 핀배열, 회로
MC33171, 2, 4,
NCV33172, 4
Single Supply 3.0 V to 44 V,
Low Power Operational
Amplifiers
Quality bipolar fabrication with innovative design concepts are
employed for the MC33171/72/74, NCV33172/74 series of
monolithic operational amplifiers. These devices operate at 180 mA
per amplifier and offer 1.8 MHz of gain bandwidth product and
2.1 V/ms slew rate without the use of JFET device technology.
Although this series can be operated from split supplies, it is
particularly suited for single supply operation, since the common
mode input voltage includes ground potential (VEE). With a
Darlington input stage, these devices exhibit high input resistance, low
input offset voltage and high gain. The all NPN output stage,
characterized by no deadband crossover distortion and large output
voltage swing, provides high capacitance drive capability, excellent
phase and gain margins, low open loop high frequency output
impedance and symmetrical source/sink AC frequency response.
The MC33171/72/74, NCV33172/74 are specified over the
industrial/automotive temperature ranges. The complete series of
single, dual and quad operational amplifiers are available in plastic as
well as the surface mount packages.
Features
Low Supply Current: 180 mA (Per Amplifier)
Wide Supply Operating Range: 3.0 V to 44 V or ±1.5 V to ±22 V
Wide Input Common Mode Range, Including Ground (VEE)
Wide Bandwidth: 1.8 MHz
High Slew Rate: 2.1 V/ms
Low Input Offset Voltage: 2.0 mV
Large Output Voltage Swing: −14.2 V to +14.2 V
(with ±15 V Supplies)
Large Capacitance Drive Capability: 0 pF to 500 pF
Low Total Harmonic Distortion: 0.03%
Excellent Phase Margin: 60°
Excellent Gain Margin: 15 dB
Output Short Circuit Protection
ESD Diodes Provide Input Protection for Dual and Quad
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
8
1
8
1
PDIP−8
P SUFFIX
CASE 626
SO−8
D, VD SUFFIX
CASE 751
14
1
14
1
14
1
PDIP−14
P, VP SUFFIX
CASE 646
SO−14
D, VD SUFFIX
CASE 751A
TSSOP−14
DTB SUFFIX
CASE 948G
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 13
1
Publication Order Number:
MC33171/D




MC33172 pdf, 반도체, 판매, 대치품
MC33171, 2, 4, NCV33172, 4
AC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = −15 V, RL connected to ground, TA = +25°C, unless otherwise noted.)
Characteristics
Symbol Min Typ Max Unit
Slew Rate (Vin = −10 V to +10 V, RL = 10 k, CL = 100 pF)
AV +1
AV −1
Gain Bandwidth Product (f = 100 kHz)
SR
GBW
1.6 2.1
− 2.1
1.4 1.8
V/ms
− MHz
Power Bandwidth
AV = +1.0 RL = 10 k, VO = 20 Vpp, THD = 5%
Phase Margin
RL = 10 k
RL = 10 k, CL = 100 pF
Gain Margin
RL = 10 k
RL = 10 k, CL = 100 pF
Equivalent Input Noise Voltage
RS = 100 W, f = 1.0 kHz
BWp
fm
Am
en
kHz
− 35 −
Deg
− 60 −
− 45 −
dB
− 15 −
− 5.0 −
− 32 − nV/Hz
Equivalent Input Noise Current (f = 1.0 kHz)
In − 0.2 − pA/ Hz
Differential Input Resistance
Vcm = 0 V
Input Capacitance
Total Harmonic Distortion
AV = +10, RL = 10 k, 2.0 Vpp VO 20 Vpp, f = 10 kHz
Channel Separation (f = 10 kHz)
Rin
Cin
THD
CS
MW
− 300 −
− 0.8 − pF
− 0.03 −
%
− 120 −
dB
Open Loop Output Impedance (f = 1.0 MHz)
zo
− 100 −
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
0
VCC
-0.8
VCC/VEE = ±1.5 V to ± 22 V
DVIO = 5.0 mV
-1.6
-2.4
0.1
0
-55
VEE
-25 0 25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Input Common Mode Voltage Range
versus Temperature
0
VCC
-1.0 Source
VCC/VEE = ± 5.0 V to ± 22 V
TA = 25°C
1.0
Sink
VEE
0
0 1.0 2.0 3.0 4.0
IL, LOAD CURRENT (±mA)
Figure 3. Split Supply Output Saturation
versus Load Current
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MC33172 전자부품, 판매, 대치품
MC33171, 2, 4, NCV33172, 4
If power to this integrated circuit is applied in reverse
polarity, or if the IC is installed backwards in a socket, large
unlimited current surges will occur through the device that
may result in device destruction.
As usual with most high frequency amplifiers, proper lead
dress, component placement and PC board layout should be
exercised for optimum frequency performance. For
example, long unshielded input or output leads may result in
unwanted input/output coupling. In order to preserve the
relatively low input capacitance associated with these
amplifiers, resistors connected to the inputs should be
immediately adjacent to the input pin to minimize additional
stray input capacitance. This not only minimizes the input
pole for optimum frequency response, but also minimizes
extraneous “pick up” at this node. Supply decoupling with
adequate capacitance immediately adjacent to the supply pin
is also important, particularly over temperature, since many
types of decoupling capacitors exhibit great impedance
changes over temperature.
The output of any one amplifier is current limited and thus
protected from a direct short to ground. However, under
such conditions, it is important not to allow the device to
exceed the maximum junction temperature rating. Typically
for ±15 V supplies, any one output can be shorted
continuously to ground without exceeding the maximum
temperature rating.
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