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Número de pieza | MMUN2211LT1 | |
Descripción | Bias Resistor Transistor | |
Fabricantes | Leshan Radio Company | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MMUN2211LT1 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
MMMUMNU22N112LT211S1eLriTes1
SERIES
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space and Component Count
• The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel. Use the Device
Number to order the 7 inch/3000 unit reel. Replace “T1” with
“T3” in the Device Number to order the13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
3
1
2
CASE 318, STYLE 6
SOT–23 (TO–236AB)
PIN 1
BASE
(INPUT)
R
1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MARKINGDIAGRAM
A6x M
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ TA = 25°C
(Note 1.) Derate above 25°C
Symbol
VCBO
VCEO
IC
PD
Value
Unit
www.DataSheet4U.com
50 Vdc
50 Vdc
100 mAdc
*200
1.6
mW
mW/°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1(K) R2(K)
MMUN2211LT1
A8A 10
10
MMUN2212LT1
A8B 22
22
A6x = Device Marking
x = A – L(See Page 2)
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
MMUN2211LT1 SOT–23 3000/Tape & Reel
MMUN2212LT1 SOT–23 3000/Tape & Reel
MMUN2213LT1 SOT–23 3000/Tape & Reel
MMUN2213LT1
A8C 47
47
MMUN2214LT1 SOT–23 3000/Tape & Reel
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
A8D
A8E
A8F
A8G
A8H
A8J
A8K
10
10
4.7
1.0
2.2
4.7
4.7
47
∞
∞
1.0
2.2
4.7
47
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
MMUN2234LT1
A8L 22
47
MMUN2234LT1 SOT–23 3000/Tape & Reel
MMUN2235LT1
A8M
2.2
47
MMUN2238LT1
A8R 2.2
∞
MMUN2241LT1
A8U 100
∞
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
MMUN2235LT1
MMUN2238LT1
MMUN2241LT1
SOT–23
SOT–23
SOT–23
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
MMUN2211S-1/11
1 page 1
IC/IB = 10
0.1
0.01
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212LT1
TA = –25°C
25°C
75°C
1000
VCE = 10 V
100
TA = 75°C
25°C
–25°C
–
0.001
0
4
3
2
1
00
20 40 60
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
10
80 1
f = 1 MHz
lE = 0 A
TA = 25°C
100
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
75°C
25°C
TA = –25°C
0.1
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
100
VO = 0.2 V
10
0.01
0.001
50 0
VO = 5 V
2 46 8
Vin, INPUT VOLTAGE (VOLTS)
10
Figure 10. Output Current vs. Input Voltage
TA = –25°C
75°C 25°C
1
0.1 0 10
20
30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
MMUN2211S–5/11
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet MMUN2211LT1.PDF ] |
Número de pieza | Descripción | Fabricantes |
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