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MMUN2230RLT1 데이터시트 PDF




Leshan Radio Company에서 제조한 전자 부품 MMUN2230RLT1은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 MMUN2230RLT1 자료 제공

부품번호 MMUN2230RLT1 기능
기능 (MMUN2211RLT1 - MMUN2233RL34) Bias Resistor Transistor
제조업체 Leshan Radio Company
로고 Leshan Radio Company 로고


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MMUN2230RLT1 데이터시트, 핀배열, 회로
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor.The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
PIN1
base
(Input)
R1
R2
www.DataSheet4U.com
PIN3
Collector
(output)
PIN2
Emitter
(Ground)
MAXIMUM RATINGS (T A = 2C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ T A = 2C (1)
Derate above 2C
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes
Time in Solder Bath
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
Symbol
VCBO
V CEO
IC
PD
Symbol
R θJA
TJ , Tstg
TL
R1 (K)
MMUN2211RLT1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RL34
NPN SILICON
BIAS RESISTOR
TRANSISTOR
3
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
Value
50
50
100
200
1.6
Unit
Vdc
Vdc
mAdc
mW
mWC
Value
625
–65 to +150
260
10
Unit
°C/W
°C
°C
Sec
R2 (K)
MMUN2211RLT1
A8A
10 10
MMUN2212RLT1
A8B
22
MMUN2213RLT1
A8C
47
MMUN2214RLT1
A8D
10
MMUN2215RLT1(2)
A8E
10
MMUN2216RLT1 (2)
A8F
4.7
MMUN2230RLT1 (2)
A8G
1
MMUN2231RLT1 (2)
A8H
2.2
MMUN2232RLT1(2)
A8J
4.7
MMUN2233RLT1 (2)
A8K
4.7
MMUN2234RLT1(2)
A8L
22
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
22
47
47
1
2.2
4.7
47
47
Q2–1/8




MMUN2230RLT1 pdf, 반도체, 판매, 대치품
LESHAN RADIO COMPANY, LTD.
250
200
150
100
50
0
–50
1000
100
MMUN2211RLT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211RLT1
1
I C /I B =10
0.1
T A = –25°C
25°C
75°C
R θJA = 625°C/W
0 50 10
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
150
V CE = 10 V
T A =75°C
25°C
–25°C
0.01
0.001
0
4
3
2
20 40 60
I C , COLLECTOR CURRENT (mA)
Figure 2. V CE(sat) versus I C
80
f = 1 MHz
l E= 0 V
T A = 25°C
10
1
10 100
I C, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
1
0
0 10 20 30 40 50
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
100
75°C
10
25°C
T A = –25°C
1
0.1
0.01
0.001
0
V O= 5 V
1 2 3 45
6 78
V in , INPUT VOLTAGE (VOLTS)
Figure 5. V CE(sat) versus I C
9 10
10
V O = 0.2 V
1
T A = –25°C
75°C
25°C
0.1
0
10 20 30 40
I C , COLLECTOR CURRENT (mA)
Figure 6. V CE(sta) versus I C
50
Q2–4/8

4페이지










MMUN2230RLT1 전자부품, 판매, 대치품
LESHAN RADIO COMPANY, LTD.
MMUN2211RLT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2214RLT1
1
I C /I B =10
0.1
0.01
T A = –25°C
25°C
75°C
0.001
0
20 40 60
I C , COLLECTOR CURRENT (mA)
Figure 17. V CE(sat) versus I C
80
4
3.5 f = 1 MHz
l E= 0 V
3 T A= 25°C
2.5
2
1.5
1
0.5
0
02
4 6 8 10 15 20 25 30 35 40 45 50
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 19. Output Capacitance
300
V CE= 10V
250
200
150
T A =75°C
25°C
–25°C
100
50
0
1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
I C , COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
100
75°C
25°C
T A = –25°C
10
V O= 5 V
1
0
1 2 3 45
6 7 8 9 10
V , INPUT VOLTAGE (VOLTS)
in
Figure 20. Output Current versus Input Voltage
10
V O = 0.2 V
1
T A = –25°C
25°C
75°C
0.1
0 10 20 30 40 50
I C, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
Q2–7/8

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관련 데이터시트

부품번호상세설명 및 기능제조사
MMUN2230RLT1

(MMUN2211RLT1 - MMUN2233RL34) Bias Resistor Transistor

Leshan Radio Company
Leshan Radio Company
MMUN2230RLT1

(MMUN2211RLT1 - MMUN2233RL34) Bias Resistor Transistor

E-Tech Electronics
E-Tech Electronics

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