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PDF MMUN2232RLT1 Data sheet ( Hoja de datos )
| Número de pieza | MMUN2232RLT1 | |
| Descripción | (MMUN2211RLT1 - MMUN2233RL34) Bias Resistor Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor.The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
designed for low power surface mount applications.
∗ Simplifies Circuit Design
∗ Reduces Board Space
∗ Reduces Component Count
∗ The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
∗ Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
PIN1
base
(Input)
R1
R2
www.DataSheet4U.com
PIN3
Collector
(output)
PIN2
Emitter
(Ground)
MAXIMUM RATINGS (T A = 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ T A = 25°C (1)
Derate above 25°C
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes
Time in Solder Bath
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
Symbol
VCBO
V CEO
IC
PD
Symbol
R θJA
TJ , Tstg
TL
R1 (K)
MMUN2211RLT1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RL34
NPN SILICON
BIAS RESISTOR
TRANSISTOR
3
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
Value
50
50
100
200
1.6
Unit
Vdc
Vdc
mAdc
mW
mW/°C
Value
625
–65 to +150
260
10
Unit
°C/W
°C
°C
Sec
R2 (K)
MMUN2211RLT1
A8A
10 10
MMUN2212RLT1
A8B
22
MMUN2213RLT1
A8C
47
MMUN2214RLT1
A8D
10
MMUN2215RLT1(2)
A8E
10
MMUN2216RLT1 (2)
A8F
4.7
MMUN2230RLT1 (2)
A8G
1
MMUN2231RLT1 (2)
A8H
2.2
MMUN2232RLT1(2)
A8J
4.7
MMUN2233RLT1 (2)
A8K
4.7
MMUN2234RLT1(2)
A8L
22
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
22
47
47
1
2.2
4.7
47
47
Q2–1/8
1 page  
1
I C /I B =10
0.1
0.01
LESHAN RADIO COMPANY, LTD.
MMUN2211RLT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212RLT1
T A = –25°C
25°C
75°C
1000
100
V CE = 10 V
T A =75°C
25°C
–25°C
0.001
0
4
3
2
20 40 60
I C, COLLECTOR CURRENT (mA)
Figure 7. V CE(sat) versus I C
80
f = 1 MHz
l E= 0 V
T A = 25°C
1
0
0 10 20 30 40 50
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
100
V O = 0.2 V
10
10
1
10 100
I C, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
75°C
25°C
T A = –25°C
10
1
0.1
0.01
0.001
0
1 2 3 45
V O= 5 V
6 7 8 9 10
V in , INPUT VOLTAGE (VOLTS)
Figure 10. Output Current versus Input Voltage
T A = –25°C
75°C 25°C
1
0.1
0 10 20 30 40 50
I C , COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
Q2–5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MMUN2232RLT1.PDF ] | |
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