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NTGS3441P PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 NTGS3441P
기능 Power MOSFET
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NTGS3441P 데이터시트, 핀배열, 회로
NTGS3441P
Power MOSFET
−20 V, −3.16 A, Single P−Channel TSOP−6
Features
Ultra Low RDS(on) to Improve Conduction Loss
Low Gate Charge to Improve Switching Losses
TSOP−6 Surface Mount Package
This is a Pb−Free Device
Applications
High Side Switch in DC−DC Converters
Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t = 10 s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
t = 10 s
VDSS
VGS
ID
PD
−20
±12
−2.5
−1.8
−3.16
0.98
V
V
A
W
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1.60
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
−1.8 A
−1.3
0.51 W
Pulsed Drain Current tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TJ,
TSTG
IS
TL
−13
−55 to
150
−1.5
260
A
°C
A
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.0751 in sq)
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 0
1
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V(BR)DSS
−20 V
RDS(ON) TYP
91 mW @ 4.5 V
144 mW @ 2.7 V
188 mW @ 2.5 V
ID MAX
−3.16 A
P−Channel
1256
3
4
MARKING
DIAGRAM
TSOP−6
CASE 318G
1 STYLE 1
S3 MG
G
1
PT = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source
6 54
1 23
Drain Drain Gate
ORDERING INFORMATION
Device
Package
Shipping
NTGS3441PT1G TSOP−6 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTGS3441P/D
NTGS3441P pdf, 반도체, 판매, 대치품
NTGS3441P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
600 5 20
VGS = 0 V
TJ = 25°C
QT
4 16
400
Ciss
3 VDS
VGS 12
200
0
0
Coss
Crss
4 8 12 16
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
20
2 QGS
QGD
8
14
ID = −3.0 A
TJ = 25°C
00
0 0.5 1 1.5 2 2.5 3 3.5
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
VDD = −10 V
ID = −1.5 A
VGS = −4.5 V
tr
td(off)
10 td(on)
tf
10
VGS = 0 V
TJ = 25°C
8
6
4
2
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Gate Threshold Voltage Variation
with Temperature
0
0.4 0.6 0.8
1 1.2
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
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