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Número de pieza | NBSG86A | |
Descripción | 2.5V/3.3V SiGe Differential Smart Gate | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NBSG86A (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! NBSG86A
2.5V/3.3V SiGe Differential
Smart Gate with Output
Level Select
The NBSG86A is a multi−function differential Logic Gate which
can be configured as an AND/NAND, OR/NOR, XOR/XNOR, or 2:1
MUX. This device is part of the GigaComm™ family of high
performance Silicon Germanium products. The device is housed in a
low profile 4x4 mm, 16−pin, flip−chip BGA or a 3x3 mm 16 pin QFN
package.
Differential inputs incorporate internal 50 W termination resistors
and accept NECL (Negative ECL), PECL (Positive ECL),
LVCMOS/LVTTL, CML, or LVDS. The OLS* input is used to
program the peak−to−peak output amplitude between 0 and 800 mV
in five discrete steps.
The NBSG86A employs input default circuitry so that under open
input conditions (Dx, Dx, VTDx, VTDx, VTSEL) the outputs of the
device will remain stable.
Features
• Maximum Input Clock Frequency > 8 GHz Typical
• Maximum Input Data Rate > 8 Gb/s Typical
• 165 ps Typical Propagation Delay
• 40 ps Typical Rise and Fall Times
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• Selectable Swing PECL Output with Operating Range:
VCC = 2.375 V to 3.465 V with VEE = 0 V
• Selectable Swing NECL Output with NECL Inputs with
Operating Range: VCC = 0 V with VEE = −2.375 V to −3.465 V
• Selectable Output Level (0 V, 200 mV, 400 mV,
600 mV, or 800 mV Peak−to−Peak Output)
• 50 W Internal Input Termination Resistors
• Pb−Free Packages are Available
*Output Level Select
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MARKING
DIAGRAM*
FCBGA−16
BA SUFFIX
CASE 489
1
QFN−16
MN SUFFIX
CASE 485G
SG
86A
LYW
16
ÇÇÇÇ1
SG
86A
ALYWG
G
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
*For additional marking information, refer to
Application Note AND8002/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 10
1
Publication Order Number:
NBSG86A/D
1 page NBSG86A
Table 7. Interfacing Options
INTERFACING OPTIONS
CONNECTIONS
CML
LVDS
Connect VTD0, VTD1, VTSEL and VTD0, VTD1 to VCC
Connect VTD0, VTD1, VTD0 and VTD1 together. Leave VTSEL open.
AC−COUPLED
Bias VTD0, VTD1, VTSEL and VTD0, VTD1 Inputs within (VIHCMR) Common Mode Range
RSECL, PECL, NECL
Standard ECL Termination Techniques
LVTTL, LVCMOS
An external voltage should be applied to the unused complementary differential input.
Nominal voltage 1.5 V for LVTTL and VCC/2 for LVCMOS inputs.
Table 8. ATTRIBUTES
Characteristics
Internal Input Pulldown Resistors
Internal Input Pullup Resistor
ESD Protection
(R1)
(R2)
Human Body Model
Machine Model
Charged Device Model
Moisture Sensitivity (Note 6)
16−FCBGA
16−QFN
Flammability Rating
Oxygen Index: 28 to 34
Transistor Count
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
6. For additional information, see Application Note AND8003/D.
Value
75 kW
37.5 kW
> 1 KV
> 50 V
> 4 KV
Level 3
Level 1
UL 94 V−0 @ 0.125 in
364
Table 9. MAXIMUM RATINGS (Note 7)
Symbol
Parameter
Condition 1
Condition 2
Rating
Units
VCC
VEE
VI
VINPP
IIN
Positive Power Supply
Negative Power Supply
Positive Input
Negative Input
Differential Input Voltage |Dn − Dn|
Input Current Through RT (50 W Resistor)
VEE = 0 V
VCC = 0 V
VEE = 0 V
VCC = 0 V
VCC − VEE w 2.8 V
VCC − VEE < 2.8 V
Static
Surge
VI v VCC
VI w VEE
3.6
−3.6
3.6
−3.6
2.8
|VCC − VEE|
45
80
V
V
V
V
V
V
mA
mA
Iout Output Current
Continuous
Surge
25 mA
50 mA
TA Operating Temperature Range
16−FCBGA
16−QFN
−40 to +70
−40 to +85
°C
°C
Tstg Storage Temperature Range
qJA Thermal Resistance (Junction−to−Ambient) 0 LFPM
(Note 8)
500 LFPM
0 LFPM
500 LFPM
16 FCBGA
16 FCBGA
16 QFN
16 QFN
−65 to +150
108
86
41.6
35.2
°C
°C/W
°C/W
°C/W
°C/W
qJC
Thermal Resistance (Junction−to−Case)
2S2P (Note 8)
2S2P (Note 9)
16 FCBGA
16 QFN
5.0 °C/W
4.0 °C/W
Tsol Wave Solder
Pb (BGA) < 15 sec
Pb (QFN) < 3 sec @ 248°C
Pb−Free (QFN) < 3 sec @ 260°C
225 °C
265
265
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
7. Maximum Ratings are those values beyond which device damage may occur.
8. JEDEC standard multilayer board − 2S2P (2 signal, 2 power).
9. JEDEC standard multilayer board − 2S2P (2 signal, 2 power) with 8 filled thermal vias under exposed pad.
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5
5 Page NBSG86A
300
200
100
0
−100
−200
−300
−400
−500
−600
−700
VCC
VCC − 400
VCC − 800
VOLS (mV)
VCC − 1200
VEE
Figure 10. Typical OLS Input Current vs. OLS Input Voltage
(VCC − VEE = 3.3 V @ 255C)
1000
VCC − 75
800
600
400
VCC − 700 VCC − 900
VEE + 100
VCC − 250 VCC − 550
200
0
VCC
VCC − 400
VCC − 1125 VCC − 1275
VCC − 800
OLS (mV)
VCC − 1200
VEE
Figure 11. OLS Operating Area
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11
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet NBSG86A.PDF ] |
Número de pieza | Descripción | Fabricantes |
NBSG86A | 2.5V/3.3V SiGe Differential Smart Gate | ON Semiconductor |
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