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NGP15N41CL 데이터시트 PDF




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부품번호 NGP15N41CL 기능
기능 Ignition IGBT
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NGP15N41CL 데이터시트, 핀배열, 회로
NGD15N41CL,
NGB15N41CL,
NGP15N41CL
Preferred Device
Ignition IGBT
15 Amps, 410 Volts
NChannel DPAK, D2PAK and TO220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and OverVoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for CoilonPlug Applications
DPAK Package Offers Smaller Footprint and Increased Board Space
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
www.DataSheet4U.com
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG) and GateEmitter Resistor (RGE)
PbFree Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
CollectorEmitter Voltage
CollectorGate Voltage
GateEmitter Voltage
Collector CurrentContinuous
@ TC = 25°C Pulsed
VCES
VCER
VGE
IC
440
440
15
15
50
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
8.0
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD
800
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 107
0.71
Operating and Storage Temperature Range
TJ, Tstg 55 to
+175
Unit
VDC
VDC
VDC
ADC
AAC
kV
V
Watts
W/°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
15 AMPS
410 VOLTS
VCE(on) 3 2.1 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
4
12
3
E
DPAK
CASE 369C
STYLE 2
12
3
4 D2PAK
CASE 418B
STYLE 4
4
TO220AB
CASE 221A
STYLE 9
12
3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 8 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
May, 2006 Rev. 7
1
Publication Order Number:
NGD15N41CL/D




NGP15N41CL pdf, 반도체, 판매, 대치품
NGD15N41CL, NGB15N41CL, NGP15N41CL
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60
VGE = 10 V
50
40
30 TJ = 25°C
5V
4.5 V
4V
3.5 V
20 3 V
10 2.5 V
0
0 1 2 34 5 678
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
60
VGE = 10 V
50
40 TJ = 150°C
30
20
10
5V
4.5 V
4V
3.5 V
3V
2.5 V
0
0 1 2 34 5 678
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 3. Output Characteristics
60
VGE = 10 V
50
5V
40
4.5 V
4V
30 TJ = 40°C
3.5 V
20 3 V
10
2.5 V
0
0 1 2 34 5 678
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics
30
VCE = 10 V
25
20
15
10 TJ = 25°C
5 TJ = 150°C
TJ = 40°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGE, GATE TO EMITTER VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
4.0
3.5 VGE = 5 V
3.0
2.5
2.0
1.5
1.0
IC = 25 A
IC = 20 A
IC = 15 A
IC = 10 A
IC = 5 A
0.5
0.0
50 25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. CollectortoEmitter Saturation
Voltage versus Junction Temperature
3
2.5 IC = 15 A
2 IC = 10 A
1.5 IC = 5 A
TJ = 25°C
1
0.5
0
3 4 5 6 7 8 9 10
GATE TO EMITTER VOLTAGE (VOLTS)
Figure 6. CollectortoEmitter Voltage versus
GatetoEmitter Voltage
http://onsemi.com
4

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NGP15N41CL 전자부품, 판매, 대치품
NGD15N41CL, NGB15N41CL, NGP15N41CL
100
DC
10
1
0.1
1 ms
10 ms
100 ms
100 μs
100
10 DC
1
0.1
100 ms
100 μs
1 ms
10 ms
0.011
10 100 1000
COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 15. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TA = 255C)
0.011
10 100 1000
COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 16. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TA = 1255C)
100
t1 = 1 ms, D = 0.05
10 t1 = 2 ms, D = 0.10
t1 = 3 ms, D = 0.30
1
I(pk)
0.1 t1
t2
DUTY CYCLE, D = t1/t2
0.011
10
100
COLLECTOREMITTER VOLTAGE (VOLTS)
1000
Figure 17. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 255C)
100
t1 = 1 ms, D = 0.05
10 t1 = 2 ms, D = 0.10
t1 = 3 ms, D = 0.30
1
I(pk)
0.1 t1
t2
DUTY CYCLE, D = t1/t2
0.011
10
100
COLLECTOREMITTER VOLTAGE (VOLTS)
1000
Figure 18. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 1255C)
http://onsemi.com
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관련 데이터시트

부품번호상세설명 및 기능제조사
NGP15N41CL

Ignition IGBT

ON Semiconductor
ON Semiconductor
NGP15N41CL

Ignition IGBT

ON Semiconductor
ON Semiconductor

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