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부품번호 | NGP15N41CL 기능 |
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기능 | Ignition IGBT | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 11 페이지수
NGD15N41CL,
NGB15N41CL,
NGP15N41CL
Preferred Device
Ignition IGBT
15 Amps, 410 Volts
N−Channel DPAK, D2PAK and TO−220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug Applications
• DPAK Package Offers Smaller Footprint and Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
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• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
• Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
VCES
VCER
VGE
IC
440
440
15
15
50
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
8.0
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD
800
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 107
0.71
Operating and Storage Temperature Range
TJ, Tstg −55 to
+175
Unit
VDC
VDC
VDC
ADC
AAC
kV
V
Watts
W/°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
15 AMPS
410 VOLTS
VCE(on) 3 2.1 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
4
12
3
E
DPAK
CASE 369C
STYLE 2
12
3
4 D2PAK
CASE 418B
STYLE 4
4
TO−220AB
CASE 221A
STYLE 9
12
3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 8 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 7
1
Publication Order Number:
NGD15N41CL/D
NGD15N41CL, NGB15N41CL, NGP15N41CL
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60
VGE = 10 V
50
40
30 TJ = 25°C
5V
4.5 V
4V
3.5 V
20 3 V
10 2.5 V
0
0 1 2 34 5 678
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
60
VGE = 10 V
50
40 TJ = 150°C
30
20
10
5V
4.5 V
4V
3.5 V
3V
2.5 V
0
0 1 2 34 5 678
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 3. Output Characteristics
60
VGE = 10 V
50
5V
40
4.5 V
4V
30 TJ = −40°C
3.5 V
20 3 V
10
2.5 V
0
0 1 2 34 5 678
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics
30
VCE = 10 V
25
20
15
10 TJ = 25°C
5 TJ = 150°C
TJ = −40°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGE, GATE TO EMITTER VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
4.0
3.5 VGE = 5 V
3.0
2.5
2.0
1.5
1.0
IC = 25 A
IC = 20 A
IC = 15 A
IC = 10 A
IC = 5 A
0.5
0.0
−50 −25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Collector−to−Emitter Saturation
Voltage versus Junction Temperature
3
2.5 IC = 15 A
2 IC = 10 A
1.5 IC = 5 A
TJ = 25°C
1
0.5
0
3 4 5 6 7 8 9 10
GATE TO EMITTER VOLTAGE (VOLTS)
Figure 6. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
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4
4페이지 NGD15N41CL, NGB15N41CL, NGP15N41CL
100
DC
10
1
0.1
1 ms
10 ms
100 ms
100 μs
100
10 DC
1
0.1
100 ms
100 μs
1 ms
10 ms
0.011
10 100 1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 15. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TA = 255C)
0.011
10 100 1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 16. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TA = 1255C)
100
t1 = 1 ms, D = 0.05
10 t1 = 2 ms, D = 0.10
t1 = 3 ms, D = 0.30
1
I(pk)
0.1 t1
t2
DUTY CYCLE, D = t1/t2
0.011
10
100
COLLECTOR−EMITTER VOLTAGE (VOLTS)
1000
Figure 17. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 255C)
100
t1 = 1 ms, D = 0.05
10 t1 = 2 ms, D = 0.10
t1 = 3 ms, D = 0.30
1
I(pk)
0.1 t1
t2
DUTY CYCLE, D = t1/t2
0.011
10
100
COLLECTOR−EMITTER VOLTAGE (VOLTS)
1000
Figure 18. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 1255C)
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7
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NGP15N41CL | Ignition IGBT | ON Semiconductor |
NGP15N41CL | Ignition IGBT | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |