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UMA6NT1 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 UMA6NT1
기능 (UMA4NT1 / UMA6NT1) Dual Common Emitter Bias Resistor Transistors
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UMA6NT1 데이터시트, 핀배열, 회로
UMA4NT1, UMA6NT1
Preferred Devices
Dual Common Emitter Bias
Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the UMC2NT1 series, two
BRT devices are housed in the SOT−353 package which is ideal for
low power surface mount applications where board space is at a
premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, cwowmw.mDaotanShefoetr4UQ.co1m
and Q2, − minus sign for Q1 (PNP) omitted)
Rating
Symbol Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
VCBO
VCEO
IC
50 Vdc
50 Vdc
100 mAdc
Thermal Resistance, Junction-to-Ambient
(Surface Mounted)
RqJA
833 °C/W
Operating and Storage Temperature Range
Total Package Dissipation @ TA = 25°C
(Note 1)
TJ, Tstg
PD
−65 to +150
*150
°C
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
DEVICE RESISTOR VALUES
Device
UMA4NT1
UMA6NT1
R1 (K)
10
47
R2 (K)
http://onsemi.com
3 21
R1 R1
Q1
4
Q2
5
MARKING
DIAGRAM
SC−88A/SOT−353
CASE 419A
STYLE 7
Ux M G
G
Ux = Device Code
x = 0 or 1
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
UMA4NT1
UMA4NT1G
UMA6NT1
Package
SOT−353
SOT−353
(Pb−Free)
SOT−353
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
UMA6NT1G
SOT−353 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 4
1
Publication Order Number:
UMA4NT1/D




UMA6NT1 pdf, 반도체, 판매, 대치품
UMA4NT1, UMA6NT1
TYPICAL ELECTRICAL CHARACTERISTICS − UMA6NT1
10
IC/IB = 10
1
0.1
1000
25°C
−25°C
TA = 75°C
100
25°C
TA = 75°C
−25°C
0.01
0
10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 6. VCE(sat) versus IC
60
VCE = 10 V
10
1 10
IC, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
100
12
f = 1 MHz
10 IE = 0 mA
TA = 25°C
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 8. Output Capacitance
100
75°C
10 TA = −25°C
1 25°C
0.1
0.01
VO = 5 V
0.001
0
1234
VIN, INPUT VOLTAGE (VOLTS)
5
Figure 9. Output Current versus Input Voltage
http://onsemi.com
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UMA6NT1

(UMA4NT1 / UMA6NT1) Dual Common Emitter Bias Resistor Transistors

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