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부품번호 | AAT7551 기능 |
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기능 | P-Channel Power MOSFET | ||
제조업체 | AAT | ||
로고 | |||
전체 6 페이지수
General Description
The AAT7551 is a dual low threshold P-channel
MOSFET designed for the battery, cell phone, and
PDA markets. Using AnalogicTech's ultra-high-
density MOSFET process and space-saving,
small outline, J-lead package, performance supe-
rior to that normally found in a TSOP-6 footprint
has been squeezed into the footprint of an
SC70JW-8 package.
Applications
• Battery Packs
• Battery-Powered Portable Equipment
• Cellular and Cordless Telephones
AAT7551
20V P-Channel Power MOSFET
Features
• Drain-Source Voltage (max): -20V
• Continuous Drain Current1 (max):
-2.7A @ 25°C
• Low On-Resistance:
— 100mΩ @ VGS = -4.5V
— 175mΩ @ VGS = -2.5V
Dual SC70JW-8 Package
Top View
D1 D1 D2 D2
8765
Absolute Maximum Ratings
TA = 25°C, unless otherwise noted.
Symbol
VDS
VGS
ID
IDM
IS
TJ
TSTG
Description
Drain-Source Voltage
Gate-Source Voltage
www.DataSheet4U.com
Continuous Drain Current @ TJ = 150°C1
Pulsed Drain Current2
Continuous Source Current (Source-Drain Diode)1
Operating Junction Temperature Range
Storage Temperature Range
1234
S1 G1 S2 G2
TA = 25°C
TA = 70°C
Value
-20
±12
±2.7
±2.2
±8
-0.6
-55 to 150
-55 to 150
Units
V
A
°C
°C
Thermal Characteristics1
Symbol
RθJA
RθJA2
RθJF
PD
Description
Junction-to-Ambient Steady State
Junction-to-Ambient t<5 Seconds
Junction-to-Foot
Maximum Power Dissipation
TA = 25°C
TA = 70°C
Typ Max Units
132 165
83 104 °C/W
60 72
1.2 W
0.75
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design;
however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
7551.2005.04.1.0
1
Typical Characteristics
TJ = 25ºC, unless otherwise noted.
Gate Charge
5
VD = 10V
4 ID = 2.7A
3
2
1
0
01
2 34
QG, Charge (nC)
5
6
AAT7551
20V P-Channel Power MOSFET
Source-Drain Diode Forward Voltage
100
10
1
0.1
0
TJ = 150°C
TJ = 25°C
0 .2 0.4 0 .6 0.8 1 1.2
VSD (V)
600
Ciss
400
Capacitance
200
Crss
Coss
0
0 5 10 15
VDS (V)
20
Single Pulse Power, Junction to Ambient
50
45
40
35
30
25
20
15
10
5
0
0.0001
0.001
0.01
0.1 1
Time (s)
10 100 1000
Transient Thermal Response, Junction to Ambient
10
1
.5
.2
.1
0.1
.02
.01
Single Pulse
0.01
0.0001
0.001
0.01
0.1
Time (s)
1
10 100
1000
4 7551.2005.04.1.0
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AAT7551 | P-Channel Power MOSFET | AAT |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |