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PDF CSC2688 Data sheet ( Hoja de datos )
| Número de pieza | CSC2688 | |
| Descripción | NPN SILICON EPITAXIAL POWER TRANSISTOR | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CSC2688 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL POWER TRANSISTOR
CSC2688
TO-126
ECB
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
300
Collector -Emitter Voltage
VCEO
300
Emitter Base Voltage
VEBO
5
Collector Current Continuous
IC
200
Collector Power Dissipation @ Ta=25 deg C PC
1.25
Collector Power Dissipation @ Tc=25 deg C PC
10
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
VCEwOww.DataSheet4U.IcCom=5mA, IB=0
Collector Base Voltage
VCBO
IC=0.1mA, IE=0
Emitter Base Voltage
VEBO
IE=0.1mA,IC=0
Collector Cut off Current
ICBO
VCB=200V, IE=0
Emitter Cut off Current
IEBO
VEB=4V,IC=0
Collector Emitter Saturation Voltage
VCE(Sat)* IC=50mA,IB=5mA
DC Current Gain
hFE*
IC=10mA, VCE=10V
Dynamic Characteristics
Transition Frequency
ft VCE=30V,IC=10mA,
Feed Back Capacitance
Cre VCB=30V, IE=0
f=1MHz
*hFE Classification
R: 40-80
O : 60-120
Y :100-200
*PULSE TEST:PW=350uS, Duty Cycle=2%
MIN MAX
300 -
300 -
5-
- 0.1
- 0.1
- 1.5
40 250
50 -
-3
G :160-250
UNIT
V
V
V
mA
W
W
deg C
deg C
UNIT
V
V
V
uA
uA
V
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CSC2688.PDF ] | |
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