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PDF BSP50 Data sheet ( Hoja de datos )
| Número de pieza | BSP50 | |
| Descripción | NPN Darlington Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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BSP50
NPN Darlington Transistor
• This device is designed for applications requiring extremly high current
gain at collector currents to 500mA.
• Sourced from process 03.
4
3
2
1 SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VCER
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
45
60
5
800
- 55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
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Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
On Characteristics
IC = 100µA, IE = 0
IE = 10µA, IC = 0
VCE = 45V, VBE = 0
VEB = 4.0V, IC = 0
hFE DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 500mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA
Min. Typ.
60
5
1000
2000
Units
V
V
V
mA
°C
Max. Units
V
V
50 nA
50 nA
1.3 V
1.9 V
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Max.
1000
8.0
125
Units
mW
mW/°C
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, May 2004
1 page | ||
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| PDF Descargar | [ Datasheet BSP50.PDF ] | |
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