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부품번호 | FDD8580 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
July 2006
FDD8580/FDU8580
N-Channel PowerTrench® MOSFET
20V, 35A, 9mΩ
Features
General Description
tm
Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A
Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A
Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V
Low gate resistance
100% Avalanche tested
RoHS compliant
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
Application
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
D
www.DataSheet4U.com
G DS
I-PAK
(TO-251AA)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package Limited)
ID -Continuous (Die Limited)
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Characteristics
(Note 1)
(Note 2)
RθJC
Thermal Resistance, Junction to Case TO-252,TO-251
RθJA
RθJA
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area
Package Marking and Ordering Information
Device Marking
FDD8580
FDU8580
Device
FDD8580
FDU8580
Package
TO-252AA
TO-251AA
Reel Size
13’’
N/A(Tube)
G
S
Ratings
20
±20
35
58
159
66
49.5
-55 to 175
Units
V
V
A
mJ
W
°C
3.03 °C/W
100 °C/W
52 °C/W
Tape Width
12mm
N/A
Quantity
2500 units
75 units
©2006 Fairchild Semiconductor Corporation
FDD8580/FDU8580 Rev. A
1
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
10 3000
8
6
VDD = 7V
VDD = 10V
1000
4
VDD = 13V
2
Ciss
Coss
Crss
f = 1MHz
VGS = 0V
0
0 5 10 15 20
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
100
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance vs Drain to Source Voltage
100
10 TJ = 25oC
TJ = 125oC
1
0.01
TJ = 150oC
0.1 1 10 100
tAV, TIME IN AVALANCHE(ms)
1000
Figure 9. Unclamped Inductive Switching
Capability
60
CURRENT LIMITED
50 BY PACKAGE
VGS = 10V
40
30
VGS = 4.5V
20
10
RθJC = 3.03oC/W
0
25 50 75
100 125 150
TC, CASE TEMPERATURE(oC)
175
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
500
100
10us
100us
10
LIMITED BY
1ms
PACKAGE
1
10ms
OPERATION IN THIS SINGLE PULSE
DC
AREA MAY BE
LIMITED BY rDS(on)
0.1
1
TJ = MAX RATED
TC = 25OC
10
40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
10000
1000
100
VGS = 10V
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
-1---7---51---5--–--0--T----C--
SINGLE PULSE
10
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum Power
Dissipation
FDD8580/FDU8580 Rev. A
4
www.fairchildsemi.com
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부품번호 | 상세설명 및 기능 | 제조사 |
FDD8580 | N-Channel MOSFET | Fairchild Semiconductor |
FDD8586 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |