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부품번호 | FDS8884 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
February 2006
FDS8884
N-Channel PowerTrench® MOSFET
30V, 8.5A, 23mΩ
General Descriptions
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
AD FREE I
Features
Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A
Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A
Low gate charge
100% RG Tested
RoHS Compliant
DD
D
D
SO-8
S SSG
www.DataSheet4U.com
5
6
7
8
4
3
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current Continuous
Pulsed
(Note 1a)
EAS Single Pulse Avalanche Energy
PD
Power dissipation
Derate above 25oC
(Note 2)
TJ, TSTG
Operating and Storage Temperature
Ratings
30
±20
8.5
40
32
2.5
20
-55 to 150
Units
V
V
A
A
mJ
W
mW/oC
oC
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
(Note 1a)
(Note 1)
50
25
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FDS8884
Device
FDS8884
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDS8884 Rev. A
1
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
10
8
VDD = 10V
VDD = 15V
6
4 VDD = 20V
2
0
0 2 4 6 8 10
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
700
600
500
f = 1MHz
400 VGS = 0V
300
200
100 Crss
Coss
Ciss
0.1 1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance vs Drain to Source Voltage
20
10
STARTING TJ = 25oC
STARTING TJ = 125oC
1
0.01
0.1 1
tAV, TIME IN AVALANCHE(ms)
10 20
Figure 9. Unclamped Inductive Switching
Capability
9
8
7 VGS = 10V
6
5 VGS = 4.5V
4
3
2
1 RθJA = 50oC/W
0
25 50 75
100 125
TA, AMBIENT TEMPERATURE(oC)
150
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
100
10us
10
100us
1 1ms
OPERATION IN THIS
10ms
AREA MAY BE
0.1 LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
100ms
1s
TA = 25oC
0.01
0.1
1
DC
10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
2000
1000
100
VGS=10V
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1----5---0-1---2-–--5---T---A---
10
SINGLE PULSE
1
10-5 10-4 10-3 10-2 10-1 100 101 102
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum Power
Dissipation
FDS8884 Rev. A
4 www.fairchildsemi.com
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS8880 | N-Channel MOSFET | Fairchild Semiconductor |
FDS8880 | N-Channel 30-V (D-S) MOSFET | Freescale |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |