|
|
|
부품번호 | FDS8878 기능 |
|
|
기능 | N-Channel MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 12 페이지수
June 2005
FDS8878
N-Channel PowerTrench® MOSFET
30V, 10.2A, 14mΩ
Features
rDS(ON) = 14mΩ, VGS = 10V, ID = 10.2A
rDS(ON) = 17mΩ, VGS = 4.5V, ID = 9.3A
High performance trench technology for extremely low
rDS(ON)
Low gate charge
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
High power and current handling capability
Applications
DC/DC converters
www.DataSheet4U.com
Branding Dash
1
2
3
4
SO-8
5
54
63
72
81
©2005 Fairchild Semiconductor Corporation
FDS8878 Rev. A1
1
www.fairchildsemi.com
Typical Characteristics TA = 25°C unless otherwise noted
1.2 12
1.0
9 VGS = 10V
0.8
0.6 6 VGS = 4.5V
0.4
0.2
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
3
RθJA=50oC/W
0
25 50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
150
Figure 2. Maximum Continuous Drain Current vs
Ambient Temperature
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
0.1
RθJA=50oC/W
PDM
0.01
0.001
10-5
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-4
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
VGS = 10V
100
VGS = 4.5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25 150 - TA
125
10
5
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
FDS8878 Rev. A1
4 www.fairchildsemi.com
4페이지 Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
0
tP
IAS
BVDSS
VDS
VDD
tAV
Figure 14. Unclamped Energy Test Circuit
Figure 15. Unclamped Energy Waveforms
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
Figure 16. Gate Charge Test Circuit
VDD
Qgs2
Qg(TOT)
VDS
Qg(5)
VGS
VGS = 10V
VGS = 5V
VGS = 1V
0
Qg(TH)
Qgs
Ig(REF)
0
Qgd
Figure 17. Gate Charge Waveforms
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
Figure 18. Switching Time Test Circuit
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
Figure 19. Switching Time Waveforms
FDS8878 Rev. A1
7 www.fairchildsemi.com
7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ FDS8878.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FDS8870 | N-Channel MOSFET | Fairchild Semiconductor |
FDS8874 | N-Channel MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |