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부품번호 | FDS8870 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 12 페이지수
April 2005
FDS8870
N-Channel PowerTrench® MOSFET
30V, 18A, 4.2mΩ
Features
rDS(ON) = 4.2mΩ, VGS = 10V, ID = 18A
rDS(ON) = 4.9mΩ, VGS = 4.5V, ID = 17A
High performance trench technology for extremely low
rDS(ON)
Low gate charge
High power and current handling capability
Applications
DC/DC converters
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
www.DataSheet4U.com
Branding Dash
1
2
3
4
SO-8
5
54
63
72
81
©2005 Fairchild Semiconductor Corporation
FDS8870 Rev. A3
1
www.fairchildsemi.com
Typical Characteristics TA = 25°C unless otherwise noted
1.2 20
1.0
15
0.8
VGS = 4.5V
VGS = 10V
0.6 10
0.4
0.2
0
0 25 50 75 100 125 150
TA , AMBIENT TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
5
RθJA=50oC/W
0
25 50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
150
Figure 2. Maximum Continuous Drain Current vs
Ambient Temperature
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.1 0.01
RθJA=50oC/W
PDM
0.01
0.001
10-5
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-4
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
1000
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
150 - TA
125
10
10-5
10-4
10-3
10-2
10-1
100
t , PULSE WIDTH (s)
101
Figure 4. Peak Current Capability
102 103
FDS8870 Rev. A3
4 www.fairchildsemi.com
4페이지 Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
0
tP
IAS
BVDSS
VDS
VDD
tAV
Figure 14. Unclamped Energy Test Circuit
Figure 15. Unclamped Energy Waveforms
VGS
Ig(REF)
VDS
L
DUT
+
VDD
-
Figure 16. Gate Charge Test Circuit
VDD
Qgs2
Qg(TOT)
VDS
Qg(5)
VGS
VGS = 10V
VGS = 5V
VGS = 1V
0
Qg(TH)
Qgs
Ig(REF)
0
Qgd
Figure 17. Gate Charge Waveforms
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
Figure 18. Switching Time Test Circuit
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
Figure 19. Switching Time Waveforms
FDS8870 Rev. A3
7 www.fairchildsemi.com
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS8870 | N-Channel MOSFET | Fairchild Semiconductor |
FDS8874 | N-Channel MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |