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부품번호 | FDS8813NZ 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
March 2007
FDS8813NZ
N-Channel PowerTrench® MOSFET
30V, 18.5A, 4.5mΩ
tm
Features
General Description
Max rDS(on) = 4.5mΩ at VGS = 10V, ID = 18.5A
Max rDS(on) = 6.0mΩ at VGS = 4.5V, ID =16A
HBM ESD protection level of 5.6kV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and current handling capability
RoHS compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
D
D
D
D
SO-8
Pin 1
D
G www.DataSheet4U.com
S
S
S
D
D
D
G
S
S
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDS8813NZ
Device
FDS8813NZ
Reel Size
13”
(Note 1a)
(Note 4)
(Note 1a)
(Note 1b)
Ratings
30
±20
18.5
74
337
2.5
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
(Note 1)
(Note 1a)
(Note 1b)
25
50
125
°C/W
Tape Width
12mm
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDS8813NZ Rev.C
1
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = 18.5A
8
6
VDD = 10V
VDD = 15V
4 VDD =20V
2
0
0 10 20 30 40 50 60
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
10000
Ciss
1000
Coss
f = 1MHz
VGS = 0V
Crss
100
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. CapacitancevsDrain
to Source Voltage
50
30
10 TJ = 25oC
TJ = 125oC
1
0.01
0.1 1 10 100
tAV, TIME IN AVALANCHE(ms)
Figure9. UnclampedInductive
Switching Capability
1000
10-3
VGS = 0V
10-4
10-5
TJ = 150oC
10-6
10-7 TJ = 25oC
10-8
10-9
0
5 10 15 20 25 30
VGS, GATE TO SOURCE VOLTAGE(V)
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
20
VGS = 10V
15
10
VGS = 4.5V
RθJA = 50oC/W
5
0
25 50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
Figure 11. Maximum Continuous Drain
Current vs Ambient Temperature
150
100
RDS(ON) LIMITED
1ms
10
10ms
1 100ms
SINGLE PULSE
TJ = MAX RATED
0.1 RθJA = 125oC/W
TA = 25oC
1s
10s
DC
0.01
0.01 0.1 1 10 100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Forward Bias Safe
Operating Area
FDS8813NZ Rev.C
4 www.fairchildsemi.com
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS8813NZ | N-Channel MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |