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PDF FDY4001CZ Data sheet ( Hoja de datos )
| Número de pieza | FDY4001CZ | |
| Descripción | Complementary N & P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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August 2006
FDY4001CZ
Complementary N & P-Channel PowerTrench®
MOSFET
tm
Features
Q1: N-Channel
Max rDS(on) = 5Ω at VGS = 4.5V, ID = 200mA
Max rDS(on) = 7Ω at VGS = 2.5V, ID = 175mA
Max rDS(on) = 9Ω at VGS = 1.8V, ID = 150mA
Q2: P-Channel
Max rDS(on) = 8Ω at VGS = -4.5V, ID = -150mA
Max rDS(on) = 12Ω at VGS = -2.5V, ID = -125mA
Max rDS(on) = 15Ω at VGS = -1.8V, ID = -100mA
ESD protection diode (note 3)
RoHS Compliant
General Description
This Complementary N & P-Channel MOSFET has been
designed using Fairchild Semiconductor’s advanced Power
Trench® process to optimize the rDS(ON) @ VGS=2.5V and
specify the rDS(ON) @ VGS = 1.8V.
Applications
Level shifting
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
6
5
4
1
2
3
www.DataSheet4U.com
S2 4
G2 5
D1 6
3 D2
2 G1
1 S1
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation (Steady State)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
RθJA
Thermal Resistance, Junction to Ambient
RθJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
Device Marking
F
Device
FDY4001CZ
Package
SC89-6
Reel Size
7”
Q1 Q2
20 -20
±12 ±8
200 -150
1000
-1000
625
446
-55 to 150
Units
V
V
mA
mW
°C
200
°C/W
280
Tape Width
8mm
Quantity
3000units
©2006 Fairchild Semiconductor Corporation
FDY4001CZ Rev. B
1
www.fairchildsemi.com
1 page  
Typical Characteristics Q1 (N-Channel)
5
ID = 600mA
4
3
2
VDS = 5V
10V
15V
1
0
0 0.2 0.4 0.6 0.8 1
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
RDS(ON) LIMIT
1
1ms
0.1
0.01
0.1
VGS = 4.5V
SINGLE PULSE
RθJA = 280oC/W
TA = 25oC
10ms
100ms
10s
1s
DC
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
100
90
80
70
60
50
40
30
20
10 Crss
0
0
f = 1MHz
VGS = 0 V
Ciss
Coss
4 8 12 16
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance vs. Drain to source
voltage.
30
SINGLE PULSE
25 RθJA = 280°C/W
TA = 25°C
20
15
10
5
0
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
0.0001
SINGLE PULSE
0.001
0.01
0.1
t1, TIME (sec)
1
RθJA(t) = r(t) * RθJA
RθJA =280 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDY4001CZ Rev. B
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDY4001CZ.PDF ] | |
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