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Datasheet FGPF70N30 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FGPF70N30 | PDP IGBT FGPF70N30 300V, 70A PDP IGBT
October 2006
FGPF70N30
300V, 70A PDP IGBT
Features
• High Current Capability • Low saturation voltage: VCE(sat) =1.4V @ IC = 40A • High Input Impedance • Fast switching • RoHS Complaint
General Description
Employing Unified IGBT Technology, Fairchild's PDP I |  Fairchild Semiconductor | igbt |
| 2 | FGPF70N30T | 70A PDP IGBT FGPF70N30T 300V, 70A PDP Trench IGBT
FGPF70N30T 300V, 70A PDP IGBT
Features
• High current capability • Low saturation voltage: VCE(sat) =1.5V @ IC = 40A • High input impedance • Fast switching • RoHS complaint
Application
. PDP System
June 2007
tm
General Description
Using Novel Trench | Fairchild Semiconductor | igbt |
| 3 | FGPF70N30TTU | 70A PDP IGBT FGPF70N30T 300V, 70A PDP Trench IGBT
FGPF70N30T 300V, 70A PDP IGBT
Features
• High current capability • Low saturation voltage: VCE(sat) =1.5V @ IC = 40A • High input impedance • Fast switching • RoHS complaint
Application
. PDP System
June 2007
tm
General Description
Using Novel Trench | Fairchild Semiconductor | igbt |
FGP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FGP10N60UNDF | IGBT, Insulated Gate Bipolar Transistor FGP10N60UNDF — 600 V, 10 A Short Circuit Rated IGBT
FGP10N60UNDF
600 V, 10 A Short Circuit Rated IGBT
Features
• Short Circuit Rated 10 us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant
September 2013
General Description
Using advanced NPT IGBT techn Fairchild Semiconductor igbt | | |
| 2 | FGP15N60UNDF | IGBT, Insulated Gate Bipolar Transistor FGP15N60UNDF 600 V, 15 A Short Circuit Rated IGBT
FGP15N60UNDF
600 V, 15 A Short Circuit Rated IGBT
Features
• Short Circuit Rated 10us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant
Applications
• Sewing Machine, CNC, Home Appliances, Motor Control
Fairchild Semiconductor igbt | | |
| 3 | FGP20N60UFD | 20A Field Stop IGBT FGP20N60UFD 600V, 20A Field Stop IGBT
October 2008
FGP20N60UFD
600V, 20A Field Stop IGBT
Features
• High current capability • Low saturation voltage: VCE(sat) =1.8V @ IC = 20A • High input impedance • Fast switching • RoHS compliant
tm
General Description
Using Novel Field Stop IGBT Te Fairchild Semiconductor igbt | | |
| 4 | FGP20N6S2 | 600V/ SMPS II Series N-Channel IGBT FGH20N6S2 / FGP20N6S2 / FGB20N6S2
August 2003
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH20N6S2, FGP20N6S2, FGB20N6S2, are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower Fairchild Semiconductor igbt | | |
| 5 | FGP3040G2_F085 | N-Channel Ignition IGBT FGB3040G2_F085 / FGD3040G2_F085 / FGP3040G2_F085 / FGI3040G2_F085
May 2014
FGB3040G2_F085 / FGD3040G2_F085 FGP3040G2_F085 / FGI3040G2_F085
EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT
Features
SCIS Energy = 300mJ at TJ = 25oC
Logic Level Gate Drive
Applications
Automotive lgnition Fairchild Semiconductor igbt | | |
| 6 | FGP30B | Glass Passivated Ultrafast Rectifier New Product
FGP30B thru FGP30D
Vishay General Semiconductor
Glass Passivated Ultrafast Rectifier
SUPERECTIFIER® DO-204AC (DO-15)
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
100 V to 200 V
IFSM
125 A
trr 35 ns
VF 0.95 V
IR 5.0 μA
TJ max.
175 °C
FEATURES • Superectifier structure fo  Vishay rectifier | | |
| 7 | FGP30C | Glass Passivated Ultrafast Rectifier New Product
FGP30B thru FGP30D
Vishay General Semiconductor
Glass Passivated Ultrafast Rectifier
SUPERECTIFIER® DO-204AC (DO-15)
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
100 V to 200 V
IFSM
125 A
trr 35 ns
VF 0.95 V
IR 5.0 μA
TJ max.
175 °C
FEATURES • Superectifier structure fo Vishay rectifier | |
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