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PDF FJY3011R Data sheet ( Hoja de datos )
| Número de pieza | FJY3011R | |
| Descripción | NPN Epitaxial Silicon Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FJY3011R
NPN Epitaxial Silicon Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=22KΩ)
• Complement to FJY4011R
November 2006
tm
C
E
B
SOT - 523F
C
S11
BE
Eqivalent Circuit
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
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IC Collector Current
TSTG
Storage Temperature Range
TJ Junction Temperature
PC Collector Power Dissipation, by RθJA
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Value
40
40
5
100
-55~150
150
200
Thermal Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
RθJA
Thermal Resistance, Junction to Ambient
* Minimum land pad size.
Max
600
Electrical Characteristics* TC = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
V(BR)CBO
Collector-Emitter Breakdown Voltage IC = 100 uA, IE = 0
V(BR)CEO
Collector-Base Breakdown Voltage
IC = 1mA, IB = 0
ICBO Collector-Cutoff Current
VCB = 30 V, IE = 0
hFE DC Current Gain
VCE = 5 V, IC = 1 mA
VCE(sat)
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1 mA
fT
Current Gain - Bandwidth Product
VCE = 10V, IC = 5 mA
Ccb Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
R Input Resistor
* Pulse Test: PW≤300µs, Duty Cycle≤2%
MIN
40
40
100
15
Units
V
V
V
mA
°C
°C
mW
Units
°C/W
Typ MAX
0.1
600
0.3
250
3.7
22 29
Units
V
V
uA
V
MHz
pF
KΩ
©2006 Fairchild Semiconductor Corporation
FJY3011R Rev. A
1
www.fairchildsemi.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FJY3011R.PDF ] | |
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