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부품번호 | FQP10N60CF 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
FQP10N60CF / FQPF10N60CF
600V N-Channel MOSFET
February 2007
FRFET TM
Features
• 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
D
GDS
TO-220
FQP Series
Absolute Maximum Ratings
GD S
TO-220F
FQPF Series
www.DataSheet4U.com
G
S
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
FQP10N60CF FQPF10N60CF
600
9.0 9.0 *
5.7 5.7 *
36 36 *
± 30
583
9.0
16.9
4.5
169 50
1.35 0.4
-55 to +150
300
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQP10N60CF FQPF10N60CF
0.74 2.5
62.5 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQP10N60CF / FQPF10N60CF Rev. A
1
www.fairchildsemi.com
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. V = 0 V
GS
2. I = 250µA
D
-50 0 50 100 150
T , Junction Temperature [°C]
J
200
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. V = 10 V
GS
2. I = 4.5 A
D
-50 0 50 100 150
T , Junction Temperature [°C]
J
200
Figure 9-1. Maximum Safe Operating Area
for FQP10N60C
Figure 9-2. Maximum Safe Operating Area
for FQPF10N60C
102
101
100 Operation in This Area
is Limited by R
DS(on)
10 µs
100 µs
1ms
10ms
100ms
DC
10-1
10-2
100
* Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101 102
V , Drain-SourceVoltage[V]
DS
103
Figure 10. Maximum Drain Current
vs. Case Temperature
10
8
6
4
2
0
25 50 75 100 125 150
T , Case Temperature [oC]
C
102
101
100
10-1
10-2
100
Operation in This Area
is Limited by R
DS(on)
10 µs
100 µs
1ms
10ms
100ms
DC
* Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101 102
V , Drain-SourceVoltage[V]
DS
103
FQP10N60CF / FQPF10N60CF Rev. A
4
www.fairchildsemi.com
4페이지 Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQP10N60CF / FQPF10N60CF Rev. A
7
www.fairchildsemi.com
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ FQP10N60CF.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FQP10N60C | 600V N-Channel MOSFET | Fairchild Semiconductor |
FQP10N60CF | N-Channel MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |