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FQP10N60CF 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FQP10N60CF은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 FQP10N60CF 자료 제공

부품번호 FQP10N60CF 기능
기능 N-Channel MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FQP10N60CF 데이터시트, 핀배열, 회로
FQP10N60CF / FQPF10N60CF
600V N-Channel MOSFET
February 2007
FRFET TM
Features
• 9A, 600V, RDS(on) = 0.8@VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
D
GDS
TO-220
FQP Series
Absolute Maximum Ratings
GD S
TO-220F
FQPF Series
www.DataSheet4U.com
G
S
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
FQP10N60CF FQPF10N60CF
600
9.0 9.0 *
5.7 5.7 *
36 36 *
± 30
583
9.0
16.9
4.5
169 50
1.35 0.4
-55 to +150
300
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQP10N60CF FQPF10N60CF
0.74 2.5
62.5 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQP10N60CF / FQPF10N60CF Rev. A
1
www.fairchildsemi.com




FQP10N60CF pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. V = 0 V
GS
2. I = 250µA
D
-50 0 50 100 150
T , Junction Temperature [°C]
J
200
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. V = 10 V
GS
2. I = 4.5 A
D
-50 0 50 100 150
T , Junction Temperature [°C]
J
200
Figure 9-1. Maximum Safe Operating Area
for FQP10N60C
Figure 9-2. Maximum Safe Operating Area
for FQPF10N60C
102
101
100 Operation in This Area
is Limited by R
DS(on)
10 µs
100 µs
1ms
10ms
100ms
DC
10-1
10-2
100
* Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101 102
V , Drain-SourceVoltage[V]
DS
103
Figure 10. Maximum Drain Current
vs. Case Temperature
10
8
6
4
2
0
25 50 75 100 125 150
T , Case Temperature [oC]
C
102
101
100
10-1
10-2
100
Operation in This Area
is Limited by R
DS(on)
10 µs
100 µs
1ms
10ms
100ms
DC
* Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101 102
V , Drain-SourceVoltage[V]
DS
103
FQP10N60CF / FQPF10N60CF Rev. A
4
www.fairchildsemi.com

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FQP10N60CF 전자부품, 판매, 대치품
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQP10N60CF / FQPF10N60CF Rev. A
7
www.fairchildsemi.com

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관련 데이터시트

부품번호상세설명 및 기능제조사
FQP10N60C

600V N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FQP10N60CF

N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

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