ISL9R860PF2 Datasheet PDF - Fairchild Semiconductor
| Part Number | ISL9R860PF2 | |
| Description | Diode ( Rectifier ) | |
| Manufacturers | Fairchild Semiconductor | |
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April 2003
ISL9R860PF2
8A, 600V Stealth™ Diode
General Description
The ISL9R860PF2 is a Stealth™ diode optimized for
low loss performance in high frequency hard switched
applications. The Stealth™ family exhibits low reverse
recovery current (IRRM) and exceptionally soft recovery
under typical operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low IRRM and short ta phase
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth™ diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49409.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2
• Fast Recovery. . . . . . . . . . . . . . . . . . . . . . . trr < 25ns
• Operating Temperature. . . . . . . . . . . . . . . . . . 150oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Internally Isolated . . . . . . . . . . . . . . . . . . . . . . . . 1kV
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package
TO-220F
Symbol
K
CATHODE
ANODE
A
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
PD
EAVL
TJ, TSTG
TL
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC = 75oC)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
600
600
600
8
16
100
26
20
-55 to 150
300
V
V
V
A
A
A
W
mJ
°C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2003 Fairchild Semiconductor Corporation
ISL9R860PF2 Rev. A
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Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
VGE
t1
t2
RG
L
DUT CURRENT
SENSE
MOSFET
+
VDD
-
IF
0
dIF
dt
trr
ta tb
0.25 IRM
IRM
Figure 12. trr Test Circuit
I = 1A
L = 40mH
R < 0.1Ω
VDD = 50V
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
CURRENT
SENSE
Q1
DUT
R
+
VDD
-
Figure 14. Avalanche Energy Test Circuit
Figure 13. trr Waveforms and Definitions
VAVL
IL
IV
IL
t0 t1 t2
t
Figure 15. Avalanche Current and Voltage
Waveforms
©2003 Fairchild Semiconductor Corporation
ISL9R860PF2 Rev. A
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| Information | Total 6 Pages | |
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