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PDF ZTX614 Data sheet ( Hoja de datos )

Número de pieza ZTX614
Descripción NPN Darlington Transistor
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! ZTX614 Hoja de datos, Descripción, Manual

ZTX614
NPN Darlington Transistor
• These device is designed for applications requiring extremely high
gain at collector currents to 0.5A and high breakdown voltage.
• Sourced from process 06.
CBE TO-226
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
100
VCBO
Collector-Base Voltage
120
VEBO
Emitter-Base Voltage
10
IC Collector Current
- Continuous
800
TJ, TSTG Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Emitter Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
On Characteristics*
IC = 10mA, IB = 0
IC = 100µA, IE = 0
IE = 100µA, IC = 0
VCB = 60V, IE = 0
VEB = 8V, IC = 0
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
* Pulse Test: Pulse Width 300µs, Duty Cycle 1.0%
IC = 100mA, VCE = 5V
IC = 500mA, VCE = 5V
IC = 800mA, IB = 8mA
IC = 800mA, VBE = 5V
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Min. Typ. Max. Units
100 V
120 V
10
0.1 µA
0.1 µA
5000
10000
1.25 V
1.8 V
Max.
1000
8
50
125
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002

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