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Datasheet MWS11-GB11-XX Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MWS11-GB11-xx | InGaP HBT Gain Block C
O N F I D E N T I A L
MWS11-GB11-xx
InGaP HBT Gain Block
A M I C R O S E M I C O M P A N Y
P REVIEW
This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed |  Microsemi Corporation | data |
MWS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MWS020xxx | 20W Standard Package MWS SERIES - 20 WATT
DESCRIPTION MWS DC/DC converters provide up to 20 watts of output power in an industry-standard package and footprint. The MWS is available in either 24V or 48V input versions. With a maximum case temperature of 100°C, the MWS is well suited for the most demanding telecom, netw  Power-One data | | |
| 2 | MWS11-GB11-xx | InGaP HBT Gain Block C
O N F I D E N T I A L
MWS11-GB11-xx
InGaP HBT Gain Block
A M I C R O S E M I C O M P A N Y
P REVIEW
This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed Microsemi Corporation data | | |
| 3 | MWS11-PH22-CS | CMDA Power Amplifier MWS11-PH22-CS
CMDA Power Amplifier
A M I C R O S E M I C O M P A N Y
P RELIMINARY
The MWS CDMA is a highefficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It i Microsemi Corporation amplifier | | |
| 4 | MWS11-PHXX-CS | W-CMDA Power Amplifier MWS11-PHxx-CS
W-CMDA Power Amplifier
A M I C R O S E M I C O M P A N Y
P RELIMINARY
The MWS W-CDMA is a highefficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. Microsemi Corporation amplifier | | |
| 5 | MWS5101 | 256-Word by 4-Bit LSI Static Random-Access Memory Random-Access Memories (RAMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
MWS5101
A3
A2 AI AD A5 AS
A7
VSS OJ: I
001 012
I 22
2 21 ~ 20 4 19 5 18 S 17
7 16 8 15 9 14 10 13 II 12
TOP VIEW
vOO A4
rRlnW
QO CS2
004
OI4 003
OI3 DO~
92CS-29976RI
TI;RMINAL ASSIGNMENT
256-Word by 4-Bit LSI Static Random-  GE data | | |
| 6 | MWS5101 | 256-Word x 4-Bit LSI Static RAM MWS5101, MWS5101A
March 1997
256-Word x 4-Bit LSI Static RAM
Description
The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs  Intersil Corporation data | | |
| 7 | MWS5101A | 256-Word by 4-Bit LSI Static Random-Access Memory Random-Access Memories (RAMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
MWS5101A
A3
A2
AI
AO 4
A5 5 A6
07
V55 01 I
8 9
001 -10
Dr2
II
22
21 20 19 18 17 16 15 14 13 12
TOP VIEW
VDD A4 R/W
CSf
o0 CS2 004
Dr4 003
DB 002
9ZCS-29976RI
TERMINAL ASSIGNMENT
256-Word by 4-Bit LSI Static Ran GE data | |
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