PDF NGA-586 Data sheet ( Hoja de datos )

Número de pieza	NGA-586
Descripción	DC-5.5 GHZ CASCADABLE IN GAP /GAAS MMIC AMPLIFIER
Fabricantes	Sirenza Microdevices
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No Preview Available ! Product Description Sirenza Microdevices NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 80mA , the NGA-586 typically provides +39.6 dBm output IP3, 19.8 dB of gain, and +18.9 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Gain & Return Loss vs. Freq. @TL=+25°C 24 GAIN 20 IRL 16 12 ORL 0 -10 -20 -30 8 -40 0123456 Frequency (GHz) NGA-586 DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier OBSOLETE See Application Note AN-059 for Alternates Product Features High Gain : 18.6 dB at 1950 MHz Cascadable 50 Ohm Patented InGaP Technology Operates From Single Supply Low Thermal Resistance Package Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Symbol Parameter Units Frequency Min. Typ. Max. G Small Signal Gain 850 MHz 17.8 19.8 21.8 dB 1950 MHz 18.6 2400 MHz 17.9 P1dB Output Power at 1dB Compression dBm 850 MHz 1950 MHz 18.9 18.5 OIP3 Output Third Order Intercept Point dBm 850 MHz 1950 MHz 39.6 34.0 Bandwidth Determined by Return Loss (>10dB) MHz 5500 IRL Input Return Loss dB 1950 MHz 14.9 ORL Output Return Loss dB 1950 MHz 19.5 NF Noise Figure dB 1950 MHz 3.5 VD Device Operating Voltage V 4.5 4.9 5.4 ID Device Operating Current mA 72 80 88 RTH, j-l Thermal Resistance (junction to lead) Test Conditions: VS = 8v RBIAS = 39 Ohms ID = 80mA Typ. TL = 25ºC °C/W 121 IP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com 1 EDS-101105 Rev. OBS 1 page OBSOLETE Preliminary NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier PCB Pad Layout Dimensions in inches [millimeters] Nominal Package Dimensions Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-101105 Rev. OBS 5 Page

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