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SGB-2233Z 데이터시트 PDF




Sirenza Microdevices에서 제조한 전자 부품 SGB-2233Z은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 SGB-2233Z 자료 제공

부품번호 SGB-2233Z 기능
기능 DC - 4.5 GHz Active Bias Gain Block
제조업체 Sirenza Microdevices
로고 Sirenza Microdevices 로고


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SGB-2233Z 데이터시트, 핀배열, 회로
Product Description
Sirenza Microdevices’ SGB-2233 is a high performance SiGe HBT
MMIC amplifier utilizing a Darlington configuration with an active bias
network. The active bias network provides stable current over tempera-
ture and process Beta variations. Designed to run directly from a 3V to
5V supply the SGB-2233 does not require a drop resistor as compared
to typical Darlington amplifiers. This robust amplifier features a Class
1C ESD rating, low thermal resistance , and unconditional stability. The
SGB-2233 product is designed for high linearity 3V gain block applica-
tions that require small size and minimal external components. It is on
chip matched to 50 ohm and an external bias inductor choke is required
for the application band.
This product is available in a RoHS Compliant and Green package with
matte tin finish, designated by the “Z” package suffix.
Functional Block Diagram
NC
NC
RFIN
NC
Active
Bias
NC
NC
RFOUT
NC
SGB-2233
Preliminary Data Sheet
SGB-2233Z
Pb RoHS Compliant
& Green Package
DC – 4.5 GHz Active Bias Gain Block
Product Features
Available in Lead Free, RoHS compliant, & Green
Packaging
High reliability SiGe HBT Technology
Robust Class 1C ESD
Simple and small size
P1dB = 6.7 dBm @ 1950MHz
IP3 = 19.0 dBm @ 1950MHz
Low Thermal Resistance = 221 C/W
Applications
3V Battery operated applications
LO buffer amp
RF pre-driver and RF receive path
Key Specifications
Symbol
Parameters: Test Conditions
Z0 = 50Ω, VCC = 3.0V, Ic = 25mA, T = 30ºC)
fO Frequency of Operation
Small Signal Gain – 850MHz
S21 Small Signal Gain – 1950MHz
Small Signal Gain – 2400MHz
Output Power at 1dB Compression – 850MHz
P1dB
Output Power at 1dB Compression – 1950MHz
Output Power at 1dB Compression – 2400MHz
Output IP3 – 850MHz
OIP3
Output IP3 – 1950MHz
Output IP3 – 2400MHz
IRL Input Return Loss @ 1950MHz
ORL
Output Return Loss@ 1950MHz
Ic Current
NF Noise Figure @1950MHz
Rth, j-l
Thermal Resistance (junction - lead)
Unit
MHz
dB
dBm
dB
dB
dB
mA
dB
ºC/W
Min.
DC
11.4
5.2
16.5
13.5
12.7
21
Typ.
13.9
12.9
12.5
7.9
6.7
6.4
20.5
19.0
19.0
19.5
16.7
25
4.2
221
Max.
4500
14.4
29
5.2
PreliminaryThe information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the
circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2006 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-103079 Rev G




SGB-2233Z pdf, 반도체, 판매, 대치품
Preliminary Data Sheet
SGB-2233 DC-4.5GHz Active Bias Gain Block
Evaluation Board Data (Vcc=VBIAS = 3.0V, Ic = 25mA) Bias Tee substituted for DC feed inductor (L1)
l S21 l vs. Frequency
18.0
16.0
14.0
12.0
10.0
+25c
8.0 +85c
-40c
6.0
4.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency (GHz)
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
0.0
l S11 l vs. Frequency
1.0 2.0 3.0 4.0
Frequency (GHz)
+25c
+85c
-40c
5.0 6.0
l S12 l vs. Frequency
-10.0
-15.0
-20.0
+25c
+85c
-40c
-25.0
-30.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency (GHz)
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
0.0
l S22 l vs. Frequency
1.0 2.0 3.0 4.0
Frequency (GHz)
+25c
+85c
-40c
5.0 6.0
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-103079 Rev G

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