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PDF XD010-04S-D4FY Data sheet ( Hoja de datos )
| Número de pieza | XD010-04S-D4FY | |
| Descripción | Class AB 10W Power Amplifier Module | |
| Fabricantes | Sirenza Microdevices | |
| Logotipo |  |
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Product Description
Sirenza Microdevices’ XD010-04S-D4F 12W power module is a robust
broadband 2-stage Class A/AB amplifier, suitable for use as a power ampli-
fier driver or output stage. The power transistors are fabricated using
Sirenza's latest, high performance LDMOS process. It is a drop-in, no-
tune, solution for high power applications requiring high efficiency, excel-
lent linearity, and unit-to-unit repeatability. Internal bias current compensa-
tion ensures stable performance over a wide temperature range. It is
internally matched to 50 ohms.
XD010-04S-D4F
XD010-04S-D4FY Pb RoHS Compliant
& Green Package
350-600 MHz Class AB
12W Power Amplifier Module
Functional Block Diagram
Stage 1
Stage 2
Bias
Network
12
Temperature
Compensation
3
4
Product Features
• Available in RoHS compliant packaging
• 50 W RF impedance
• 12W Output P1dB
• Single Supply Operation : Nominally 28V
• High Gain: 32 dB at 450 MHz
• High Efficiency: 30% at 450 MHz
• Robust 8000V ESD (HBM), Class 3B
• XeMOS II LDMOS FETS
• Temperature Compensation
RF in
V VD1 D2
Case Flange = Ground
RF out
Key Specifications
Applications
• DTV
• Public Service
• Wireless Infrastructure
• Military Communications
Symbol
Parameter
Unit
Frequency
Frequency of Operation
MHz
P1dB
Gain
Output Power at 1dB Compression, 450MHz
Gain at 10W Output Power, 450MHz
W
dB
Gain Flatness
Peak to Peak Gain Variation, 350 - 600MHz
dB
IRL
Input Return Loss 1W Output Power, 350 - 600MHz
dB
Efficiency
Linearity
Drain Efficiency at 10W CW, 350-600MHz
3rd Order IMD at 10W PEP (Two Tone), 450MHz & 451MHz
%
dBc
Delay
Signal Delay from Pin 1 to Pin 4
nS
Phase Linearity
Deviation from Linear Phase (Peak to Peak)
Deg
Frequency
Frequency of Operation
MHz
RTH, j-l
RTH, j-2
Thermal Resistance Stage 1 (Junction-to-Case)
Thermal Resistance Stage 2 (Junction-to-Case)
ºC/W
ºC/W
Test Conditions Zin = Zout = 50Ω, VDD = 28.0V, IDQ1 = 230 mA, IDQ2 =150 mA, TFlange = 25ºC
Min.
350
-
30
-
10
26
-
-
-
350
Typ.
-
12
32
1.0
15
30
-32
2.5
0.5
-
11
4
Max.
600
-
-
2.0
-
-
-28
-
-
600
1625-1675The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and
all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1 EDS-104259 Rev D
1 page  
Package Outline Drawing
XD010-04S-D4F 350-600 MHz 12W Power Amp Module
Recommended PCB Cutout and Landing Pads for the D4F Package
Note 3: Dimensions are in inches
Refer to Application note AN-060 “Installation Instructions for XD Module Series” for additional mounting info. App note availbale at at www.sirenza.com
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-104259 Rev D
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet XD010-04S-D4FY.PDF ] | |
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