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PDF BU508DF Data sheet ( Hoja de datos )

Número de pieza BU508DF
Descripción SILICON DIFFUSED POWER TRANSISTORS
Fabricantes Comset 
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No Preview Available ! BU508DF Hoja de datos, Descripción, Manual

NPN BU508DF
SILICON DIFFUSED POWER TRANSISTORS
The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for
the BU508DF).
They are a high voltage, high speed switching and they are intended for use in horizontal deflexion
circuits of colour television receivers.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCESM
IC
ICM
IB
ICsat
IBM
Pt
TJ
TStg
Ratings
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Collector Current saturation
Base Peak Current
Total Power Dissipation
Junction Temperature
Storage Temperature
IB = 0
VBE = 0
@ TC = 25°
Value
700
1500
8
15
4
4.5
6
34
150
-65 to +150
Unit
V
V
A
A
A
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-mb
RthJ-h
RthJ-h
RthJ-a
Ratings
Thermal Resistance, Junction to Mounting Base
Thermal Resistance, Junction to Hexternal Heatsink
Thermal Resistance, Junction to Hexternal Heatsink
Thermal Resistance, Junction to Ambient
ISOLATION
Symbol
VISOL
CISOL
Ratings
Isolation Voltage from all terminals to external
heatsink (peak value)
Isolation capacitance from collector to external
heatsink
Typ.
Value
1.0
3.7
2.8
35
Unit
K/W
K/W
K/W
K/W
Value
1500
21
Unit
V
pF
*
COMSET SEMICONDUCTORS
1/2

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