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FPM2750QFN 데이터시트 PDF




Filtronic에서 제조한 전자 부품 FPM2750QFN은 전자 산업 및 응용 분야에서
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부품번호 FPM2750QFN 기능
기능 LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE
제조업체 Filtronic
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FPM2750QFN 데이터시트, 핀배열, 회로
FPM2750QFN
LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE
Datasheet v2.5
FEATURES:
Balanced low noise amplifier module
Excellent Noise figure: 0.4dB at 1850MHz
Low drive current: 40mA typical (3.0V)
Combined IP3: 36dBm (100mA)
Combined P1dB: 23dBm (100mA)
Small footprint: 4mm x 4mm x 0.9mm QFN
RoHS compliant: (Directive 2002/95/EC)
PACKAGE:
GENERAL DESCRIPTION:
The FPM2750QFN is a packaged pair of
pseudomorphic High Electron Mobility
Transistors (pHEMT) specifically optimised for
balanced configuration systems. The Filtronic
0.25µm process ensures class-leading noise
performance. The use of a small footprint
plastic package allows for a cost effective total
system implementation.
TYPICAL APPLICATIONS:
Wireless infrastructure: Tower mounted
Amplifiers and front end LNAs for
EGSM/PCS/WCDMA/UMTS base stations
High intercept-point LNAs
ELECTRICAL SPECIFICATIONS (as measured on each device unless otherwise stated):
PARAMETER
SYMBOL
CONDITIONS
MIN TYP
MAX
UNITS
Noise Figure
Output IP3
in balanced mode
SSG in balanced mode
P1dB in balanced mode
Small Signal Gain
Power at 1dB Gain Compression
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
NF
IP3
SSG
P1dB
SSG
P1dB
IDSS
IMAX
GM
IGSO
|VP|
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.75 mA
0.4
0.6
32
33 36
18.5
17.5 20
21
21.5 23.5
19.0
19.5
17.5
17.5
185 230 280
375
200
5
0.7 1.0 1.3
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 0.75 mA
16
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 0.75 mA
16
Thermal Resistance
ΘJC
1W dissipation, case temperature 22°C
124
Note: TAMBIENT = 22°; RF specification measured at f= 1850MHz using CW signal (except as noted).
1
dB
dBm
dB
dBm
dB
dBm
mA
mA
mS
μA
V
V
V
°C/W
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Website: www.filtronic.com




FPM2750QFN pdf, 반도체, 판매, 대치품
REFERENCE DESIGN 1850MHZ (SINGLE ENDED OPERATION):
FPM2750QFN
Datasheet v2.5
Note: Evaluation board drawing available upon request.
Note: Package Schematic
BILL OF MATERIALS:
DESIGNATOR
C1, C2, C3, C4
C5, C6, C7, C8, C9, C17
C10, C18, C19, C20
C11, C12, C13, C14, C15,
C16
C25, C26, C27, C29
L1, L2, L3, L4
Q2
R1, R2
RF1, RF2, RF3, RF4
(V1, V2)
SUPPLIER
RS Components
RS Components
RS Components
RS Components
RS Components
RS Components
FILTRONIC
RS Components
RS Components
RS Components
Evaluation board
FILTRONIC
PART NUMBER
464-6587
464-6385
264-4602
464-6543
406-0006
484-1372
FPM2750QFN
213-2042
363-4707
453-173
EBD12PA
DESCRIPTION
CAP-20pF-0805-+/-5%-50V(MIN)-LOW_ESR
CAP-10pF-0603-5%-50V-COG
CAP-22nF-0603-10%-50V
CAP-47nF-0603-+80/-20%-50V-Y5V
CAP-1uF-CASEB-20%-35V-TANT
IND-12nH-2012(0805)-5%-600mA-HQ
Dual FPD750-QFN4x4
RESIST-22ohm-1608(0603)-1%-0.1W
SMA Side Mount RF Connector
DC Connector (4 way)
31mil thick FR4
1/2 Ounce Cu on both sides
QUANTITY
4
6
4
6
4
4
1
2
4
2
1
Tel: +44 (0) 1325 301111
4
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Website: www.filtronic.com

4페이지










FPM2750QFN 전자부품, 판매, 대치품
FPM2750QFN
Datasheet v2.5
TYPICAL SMALL SIGNAL MAGNITUDE DIFFERENCE WITHIN A SINGLE PACKAGE:
400
300
200
100
0
0.0
0.1 0.2 0.3 0.4
|S11_ChA(mag) - S11_ChB(mag)|
0.5
500
400
300
200
100
0
0.0
0.1 0.2 0.3 0.4
|S22_ChA(mag) - S22_ChB(mag)|
0.5
400
300 300
200 200
100 100
0
-4 -2 0 2 4
S21_ChA(dB) - S21_ChB(dB)
0
-4 -2
0
2
4
S12_ChA(dB) - S12_ChB(dB)
The histograms above represent the distribution of the asymmetry of RF parameters for the devices
within a package. ChA and ChB are the two devices within the same package. The sample size for the
histograms above is 1000 parts.
PARAMETER
|S11ChA(mag) - S11ChB(mag)|
|S22ChA(mag) – S22ChB(mag)|
S21ChA(dB) – S21ChB(dB)
S12ChA(dB) – S12ChB(dB)
MEDIAN
0.0001
0.0001
0.006
-0.128
STANDARD DEVIATION
0.027
0.019
0.408
0.205
TEST LIMIT
0.1
0.1
±0.75
±0.75
CPK
1.3
1.7
0.68
1.43
Tel: +44 (0) 1325 301111
7
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Website: www.filtronic.com

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FPM2750QFN

LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE

Filtronic
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