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부품번호 | IRF3703PBF 기능 |
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기능 | SMPS MOSFET | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 8 페이지수
PD - 94971
SMPS MOSFET IRF3703PbF
Applications
l Synchronous Rectification
l Active ORing
l Lead-Free
Benefits
l Ultra Low On-Resistance
l Low Gate Impedance to Reduce Switching
Losses
l Fully Avalanche Rated
HEXFET® Power MOSFET
VDSS
30V
RDS(on) max
ID
2.8mΩ
210A
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
TO-220AB
Max.
210
100
1000
230
3.8
1.5
± 20
5.0
-55 to + 175
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
0.5
–––
Max.
0.65
–––
62
Units
°C/W
Notes through are on page 8
www.irf.com
1
02/02/04
IRF3703PbF
14000
12000
10000
8000
6000
4000
2000
0
1
VCCCGirossssSss
=
=
=
=
0V,
CCCggdsds
+
+
f = 1MHz
Cgd , Cds
Cgd
SHORTED
Ciss
Coss
Crss
10
VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 76A
16
VDS = 24V
12
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 40 80 120 160 200 240 280 320
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175° C
10
TJ = 25° C
1
0.1
0.0
VGS = 0 V
0.4 0.8 1.2 1.6 2.0
VSD ,Source-to-Drain Voltage (V)
2.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1000
10us
100us
100
1ms
TTJC
=
=
25 ° C
175 ° C
10ms
Single Pulse
10
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
www.irf.com
4페이지 IRF3703PbF
D.U.T
+
-
RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
- +
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
VDD
ISD
* VGS = 5V for Logic Level Devices
www.irf.com
Fig 14. For N-Channel HEXFET® Power MOSFET
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ IRF3703PBF.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IRF3703PBF | SMPS MOSFET | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |