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PDF NJ30 Data sheet ( Hoja de datos )
| Número de pieza | NJ30 | |
| Descripción | Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier | |
| Fabricantes | INTERFET | |
| Logotipo |  |
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F-14
NJ30 Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
This process available for customer-specified
applications.
www.DataSheet4U.com
01/99
G
S-D
S-D
G
Die Size = 0.016" X 0.016"
All Round Bond Pads = 0.0028"
All Square Bond Pads = 0.004"
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
NJ30 Process
Min Typ Max Unit
Test Conditions
V(BR)GSS – 30 – 40
V IG = – 1 µA, VDS = ØV
IGSS – 10 – 100 pA VGS = – 20V, VDS = ØV
IDSS 2
22 mA VDS = 15V, VGS = ØV
VGS(OFF)
–1
– 5 V VDS = 15V, ID = 1 nA
gfs
6
mS VDS = 15V, VGS = ØV
f = 1 kHz
Ciss
4.3 5 pF VDS = 15V, VGS = ØV
f = 1 MHz
Crss
1 1.5 pF VDS = 15V, VGS = ØV
f = 1 MHz
e¯N
4
nV/√HZ VDS = 10V, ID = 5 mA
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet NJ30.PDF ] | |
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