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PDF NJ36D Data sheet ( Hoja de datos )
| Número de pieza | NJ36D | |
| Descripción | Silicon Junction Field-Effect Transistor | |
| Fabricantes | InterFET | |
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F-22
NJ36D Process
Silicon Junction Field-Effect Transistor
¥ Monolithic Dual Construction
¥ High Frequency Amplifier
¥ Low-Noise Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ36D Process.
Datasheet
2N5911, 2N5912
IFN5911, IFN5912
www.DataSheet4U.com
01/99
SG
DD
GS
Die Size = 0.026" X 0.026"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
Differential Gate Source Voltage
NJ36D Process
Min Typ Max Unit
Test Conditions
V(BR)GSS
IGSS
IDSS
VGS(OFF)
– 25
1
– 0.5
– 35
0.05
0.1
40
–8
V IG = – 1 mA, VDS = ØV
nA VGS = – 15V, VDS = ØV
mA VDS = 15V, VGS = ØV
V VDS = 15V, ID = 1 nA
rds(on)
gfs
Ciss
Crss
e¯N
VGS1– VGS2
90
5
250 Ω ID = Ø mA, VGS = ØV
8.5 mS VDS = 15V, VGS = ØV
5.5 7.0 pF VDS = 10V, VGS = ØV
1.5 3 pF VDS = 10V, VGS = ØV
5 nV/√HZ VDS = 15V, ID = 5 mA
20 100 mV VDG = 15V, ID = 5 mA
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NJ36D.PDF ] | |
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