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PDF NJ450 Data sheet ( Hoja de datos )
| Número de pieza | NJ450 | |
| Descripción | Silicon Junction Field-Effect Transistor | |
| Fabricantes | InterFET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NJ450 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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F-36
NJ450 Process
Silicon Junction Field-Effect Transistor
¥ LOW R(on) Switch
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ450 Process.
Datasheet
2SK363
IFN146, IFN147
IFN363
J108, J109
J110, J110A
01/99
G
S-D
S-D
G
Die Size = 0.028" X 0.028"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
www.DataSheet4U.com
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Forward Transconductance
Input Capacitance
Feedback Capacitance
V(BR)GSS
IGSS
IDSS
VGS(OFF)
Min
– 25
5
– 0.1
NJ450 Process
Typ Max Unit
Test Conditions
– 30 V IG = – 1 µA, VDS = ØV
– 50 – 1000 pA VGS = – 15V, VDS = ØV
600 mA VDS = 15V, VGS = ØV
– 10 V VDS = 15V, ID = 1 nA
rds(on)
gfs
Ciss
Crss
7
Ω ID = 1 mA, VGS = ØV
f = 1 kHz
250
mS VDS = 15V, VGS = ØV
f = 1 kHz
20
pF VDS = ØV, VGS = – 10V
f = 1 MHz
10
pF VDS = ØV, VGS = – 10V
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NJ450.PDF ] | |
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