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PDF NJ72 Data sheet ( Hoja de datos )
| Número de pieza | NJ72 | |
| Descripción | Silicon Junction Field-Effect Transistor | |
| Fabricantes | INTERFET | |
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F-26
NJ72 Process
Silicon Junction Field-Effect Transistor
¥ VHF/UHF Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ72 Process.
Datasheet
IFN5564, IFN5565
IFN5566
J308, J309
J308, J309
J310
Datasheet
U308, U309
U430, U431
VCR2N
www.DataSheet4U.com
01/99
G
S-D
S-D
G
Die Size = 0.020" X 0.020"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Drain Source ON Resistance
Input Capacitance
Feedback Capacitance
NJ72 Process
Min Typ Max Unit
Test Conditions
V(BR)GSS – 25 – 40
V IG = – 1 µA, VDS = ØV
IGSS – 10 – 100 pA VGS = – 15V, VDS = ØV
IDSS 5
90 mA VDS = 15V, VGS = ØV
VGS(OFF)
–1
– 5.5 V VDS = 15V, ID = 1 nA
gfs
rds(on)
Ciss
Crss
22
mS VDS = 15V, VGS = ØV
f = 1 kHz
40
Ω ID = 1 mA, VGS = ØV
f = 1 kHz
6.5
pF VDS = ØV, VGS = – 10V
f = 1 MHz
2.5
pF VDS = ØV, VGS = – 10V
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NJ72.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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