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SXA-389Z 데이터시트 PDF




Sirenza Microdevices에서 제조한 전자 부품 SXA-389Z은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 SXA-389Z 기능
기능 Medium Power GaAs HBT Amplifier
제조업체 Sirenza Microdevices
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SXA-389Z 데이터시트, 핀배열, 회로
Product Description
Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost
surface-mountable plastic package. These HBT MMICs are
fabricated using molecular beam epitaxial growth technology
which produces reliable and consistent performance from wafer to
wafer and lot to lot.
SXA-389
SXA-389Z Pb RoHS Compliant
& Green Package
400-2500 MHz ¼ W Medium Power
GaAs HBT Amplifier with Active Bias
These amplifiers are specially designed for use as driver devices
for infrastructure equipment in the 400-2500 MHz cellular, ISM,
WLL, PCS, W-CDMA applications.
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS
compliant per EU Directive 2002/95. This package is also manu-
factured with green molding compounds that contain no antimony
trioxide nor halogenated fire retardants.
Typical IP3, P1dB, Gain
50
45 OIP3
P1dB
40 Gain
35
30
25
20
15
10
www.DataSheet4U.com
5
0
850 MHz
1960 MHz
2140 MHz
2450 MHz
Product Features
• On-chip Active Bias Control, Single 5V Supply
• High Output 3rd Order Intercept:
+42 to +44 dBm typ.
• High P1dB : +25 dBm typ.
• High Gain: +19 dB at 850 MHz
• High Efficiency: consumes only 600 mW
• Patented High Reliability GaAs HBT Technology
• Surface-Mountable Power Plastic Package
Applications
• W-CDMA, PCS, Cellular Systems
• High Linearity IF Amplifiers
• Multi-Carrier Applications
Symbol
Parameters: Test Conditions:
Z0 = 50 Ohms, Ta = 25°C
P1dB Output Power at 1dB Compression
S21 Small signal gain
S11 Input VSWR
OIP3
Output Third Order Intercept Point
(Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
NF Noise Figure
ID
PDISS
Rth, j-l
Device Current
Operating Dissipated Power
Thermal Resistance (junction - lead)
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
Vcc = 5V
Units
dBm
dB
-
dBm
dB
mA
mW
° C/W
Min.
24
12.5
39
90
Typ.
25
25
25
25
19
14
13.5
13
1.3:1
1.4:1
1.3:1
1.1:1
43
44
42
42
4.7
5.5
6.0
6.0
115
575
100
Max.
15
122
610
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent
rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or
systems.
Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
Phone: (800) SMI-MMIC
EDS-102231 Rev D
303 S. Technology Ct. Broomfield, CO 80021
1
http://www.sirenza.com




SXA-389Z pdf, 반도체, 판매, 대치품
SXA-389 ¼ W GaAs HBT Amplifier
2140 MHz Application Circuit Data, VCC= 5V, ID= 120mA
Note: Tuned for Output IP3
P1dB vs. Frequency
30
28
26
24
22
20
2 .1 1
2.12
2.13
2.14
GHz
2.15
25C
85C
-40C
2.16 2.17
0
-5
-10
-15
-20
-25
-30
2 .1 1
Input/Output Return Loss,
Isolation vs. Frequency, T=25°C
S11
S12
S22
2 .1 2
2 .1 3
2 .1 4
GHz
2 .1 5
2 .1 6
2 .1 7
Third Order Intercept vs. Tone Power
Frequency = 2.14 GHz
50
-40C
47 25C
85C
44
41
38
35
0
3 6 9 12
P per tone (dBm)
OUT
15
Gain vs. Frequency
20
25C
18 85C
-40C
16
14
12
10
2.11
2.12
2.13 2.14
GHz
2.15
2.16
2.17
Third Order Intercept vs. Frequency
(POUT per tone = 11dBm)
50
-40C
47 25C
85C
44
41
38
35
2.11
2.12
2.13 2.14
GHz
2.15
2.16
2.17
2140 MHz Adjacent Channel Power vs.
Channel Output Power
-40
-45
-50
-55
-60
-65
-70
10
11 12 13 14 15
Channel Output Power (dBm)
W-CDMA, 64 DPCH + Overhead
25C
85C
-40C
16 17
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-102231 Rev D

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SXA-389Z 전자부품, 판매, 대치품
SXA-389 ¼ W GaAs HBT Amplifier
Absolute Maximum Ratings
Parameter
Absolute Limit
Max. Supply Current (ID)
Max. Device Voltage (VCC)
Max. Power Dissipation
240 mA
6.0 V
1500 mW
Max. RF Input Power
100 mW
Max. Junction Temp. (TJ)
Operating Lead Temp. (TL)
Max. Storage Temp.
+165 ºC
-40 to +85 ºC
+150 ºC
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continuous operation, the
device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVCC (max) < (TJ - TL)/Rth,j-l
ESD: Class 1B (Passes 500V ESD Pulse)
Appropriate precautions in handling, packaging
and testing devices must be observed.
Part Number Ordering Information
Part Number
SXA-389
SXA-389B
Devices Per Reel Reel Size
1000
7"
1000
7"
Pin Description
Pin #
1
2
3
4
Function
Description
Base
Base Pin
GND & Emitter
Connection to ground. Use via holes to reduce lead inductance.
Place vias as close to ground leads as possible.
Collector Collector Pin
GND & Emitter Same as Pin 2
Part Identification Marking
4
XA3
4
XA3Z
123
123
See Application Note AN-075
for Package Outline Drawing
Recommended Mounting Configuration for
Optimum RF and Thermal Performance
Ground Plane
Plated Thru
Holes
(0.020" DIA)
SXA-389B
Machine
Screws
(Optional)
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC
7
http://www.sirenza.com
EDS-102231 Rev D

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