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PDF SXT-289 Data sheet ( Hoja de datos )
| Número de pieza | SXT-289 | |
| Descripción | Medium Power GaAs HBT Amplifier | |
| Fabricantes | Sirenza Microdevices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SXT-289 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Product Description
Sirenza Microdevices’ SXT-289 amplifier is a high efficiency
GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed
in low-cost surface-mountable plastic package. These HBT
MMICs are fabricated using molecular beam epitaxial growth
technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 1800-2500 MHz
cellular, ISM, WLL and Wideband CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
45
40
35
30
25
20
15
10
5
0
www.DataSheet4U.com
Typical IP3, P1dB, Gain
IP3
P1dB
Gain
1960 MHz
2140 MHz
2450 MHz
SXT-289
1800-2500 MHz Medium Power
GaAs HBT Amplifier
Product Features
• Patented High Reliability GaAs HBT Technology
• High Output 3rd Order Intercept : +42 dBm typ.
at 2450 MHz
• Surface-Mountable Power Plastic Package
Applications
• Balanced Amplifier Configuration App. Note
(AN-011)
• PCS Systems
• WLL, Wideband CDMA Systems
• ISM Systems
Symbol
Parameters: Test Conditions:
Z0 = 50 Ohms, Ta = 25°C
P1dB Output Power at 1dB Compression
S21 Small signal gain
S11 Input VSWR
IP3
Output Third Order Intercept Point
(Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
NF Noise Figure
ID
Rth, j-l
Device Current
Thermal Resistance (junction - lead)
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
VS = 8V
RBIAS = 27 Ohms
VD = 5 V typ.
Units
dBm
dBm
dBm
dB
dB
dB
-
dBm
dBm
dBm
dB
dB
dB
mA
° C/W
Min. Typ. Max.
22.5
13.5
37.5
23.5
23.5
23.0
15.0
15.0
13.8
1.4:1
1.6:1
1.6:1
41.0
40.0
42.0
4.4
4.5
5.4
16.6
85 105 120
108
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-101157 Rev G
1 page  
SXT-289 1800-2500 MHz Power Amplifier
1960 MHz Application Circuit Data, VS=8V, ID=105mA, RBIAS=27 Ohms
IS-95, 9 Channels Forward
1960 MHz Adjacent Channel Power vs. Channel Output Power
-40
+25°C
-45 +85°C
-40°C
-50
-55
-60
-65
-70
-75
-80
12
13 14 15 16
Channel Output Power (dBm)
17
IS-95 CDMA at 1960 MHz
+17 dBm
+14 dBm
+11 dBm
+8 dBm
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-101157 Rev G
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SXT-289.PDF ] | |
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