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PDF SXTA42 Data sheet ( Hoja de datos )
| Número de pieza | SXTA42 | |
| Descripción | NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
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SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 JANUARY 1996
7
COMPLEMENTARY TYPE SXTA92
PARTMARKING DETAIL SID
SXTA42
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
C
B
SOT89
E
VALUE
300
300
6
500
1
-65 to +150
UNIT
V
V
V
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
Collector-Base
Breakdown Voltage
V(BR)CBO 300
V
Collector-Emitter
Breakdown Voltage
V(BR)CEO 300
V
Emitter-Base
Breakdown Voltage
V(BR)EBO 6
V
Collector Cut-Off
Current
ICBO
0.1 µA
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
IEBO
VCE(sat)
0.1 µA
0.5 V
Base-Emitter
Saturation Voltage
VBE(sat)
0.9 V
Static Forward Current hFE
Transfer Ratio
25
40
40
Transition
Frequency
fT 50
MHz
Output Capacitance
Cobo
6 pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMTA42 datasheet.
CONDITIONS.
IC=100µA, IE=0
IC=1mA, IB=0*
IE=100µA, IC=0
VCB=200V, IE=0
VEB=6V, IC=0
IC=20mA, IB=2mA*
IC=20mA, IB=2mA*
IC=1mA, VCE=10V*
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
IC=10mA, VCE=20V
f=20MHz
VCB=20V, f=1MHz
3 - 306
1 page | ||
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| PDF Descargar | [ Datasheet SXTA42.PDF ] | |
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