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DTD543EE PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 DTD543EE
기능 Digital transistors
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DTD543EE 데이터시트, 핀배열, 회로
Transistors
DTD543EE / DTD543EM
Low VCE (sat) Digital transistors
(with built-in resistors)
DTD543EE / DTD543EM
zApplications
Inverter, Interface, Driver
zStructure
NPN digital transistor (Built-in resistor type)
zFeature
1) VCE (sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for
operation, making device design easy.
zExternal dimensions (Unit : mm)
DTD543EE
1.6
0.3
(3)
0.7
0.55
(2) (1)
0.2 0.2
0.5 0.5
EMT3
1.0
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.15 (1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Addreviated symbol : X23
DTD543EM
VMT3
1.2
0.32
(3)
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
(1) IN
(2) GND
(3) OUT
Each lead has same dimensions
Addreviated symbol : X23
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Collector current
1
IC (max)
Power dissipation 2
PD
Junction temperature
Tj
Storage temperature
Tstg
1 Characteristics of built-in transistor.
2 Each terminal mounted on a recommended land.
Limits
DTD543EE DTD543EM
12
10 to +12
500
150
150
55 to +150
Unit
V
V
mA
mW
C
C
zPackaging specifications
Package
Packaging type
Code
Part No.
Basic ordering
unit (pieces)
DTD543EE
DTD543EM
EMT3
Taping
TL
VMT3
Taping
T2L
3000 8000
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ.
Input voltage
VI(off)
VI(on)
2.5
Output voltage
VO(on)
60
Input current
II − −
Output current
IO(off)
DC current gain
Transition frequency
GI 115
fT 260
Input resistance
R1 3.29 4.7
Resistance ratio
R2/R1 0.8 1.0
Characteristics of built-in transistor.
Max.
0.5
300
1.4
0.5
6.11
1.2
Unit
V
mV
mA
µA
MHz
k
Conditions
VCC= 5V, IO= 100µA
VO= 0.3V, IO= 20mA
IO/II= 100mA / 5mA
VI= 5V
VCC= 12V, VI=0V
VO= 2V, IO= 100mA
VCE= 10V, IE=5mA, f=100MHz
zEquivalent circuit
R1
IN
R2
OUT
GND
IN OUT
GND
R1=4.7k/ R2=4.7k
1/1






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부품번호상세설명 및 기능제조사
DTD543EE

Digital transistors

Rohm
Rohm
DTD543EM

Digital transistors

Rohm
Rohm

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