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DTD543XE PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 DTD543XE
기능 Digital transistors
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DTD543XE 데이터시트, 핀배열, 회로
Transistors
DTD543XE / DTD543XM
500mA / 12V Low VCE (sat) Digital transistors
(with built-in resistors)
DTD543XE / DTD543XM
zApplications
Inverter, Interface, Driver
zFeature
1) VCE (sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input resistors
(see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely
eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation,
making the device design easy.
zStructure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
zExternal dimensions (Unit : mm)
DTD543XE
1.6
0.3
(3)
0.7
0.55
(2) (1)
0.2 0.2
0.5 0.5
EMT3
1.0
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.15 (1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Addreviated symbol : X43
DTD543XM
VMT3
1.2
0.32
(3)
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
(1) IN
(2) GND
(3) OUT
Each lead has same dimensions
Addreviated symbol : X43
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
DTD543XE DTD543XM
Supply voltage
VCC 12
Input voltage
VIN
Collector current 1 IC (max)
7 to +12
500
Power dissipation
Junction temperature 2
PD
Tj
150
150
Storage temperature
Tstg
1 Characteristics of built-in transistor.
2 Each terminal mounted on a recommended land.
55 to +150
Unit
V
V
mA
mW
C
C
zPackaging specifications
Package
Packaging type
Code
EMT3
Taping
TL
Part No.
Basic ordering
unit (pieces)
3000
DTD543XE
DTD543XM
VMT3
Taping
T2L
8000
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ.
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
fT
2.5
140
60
260
Input resistance
R1
Resistance ratio
R2/R1
Characteristics of built-in transistor.
3.29
1.7
4.7
2.1
Max.
0.3
300
1.4
500
6.11
2.6
Unit
V
mV
mA
µA
MHz
k
Conditions
VCC= 5V, IO= 100µA
VO= 0.3V, IO= 2mA
IO/II= 100mA / 5mA
VI= 5V
VCC= 12V, VI=0V
VO= 2V, IO= 100mA
VCE= 10V, IE=5mA, f=100MHz
zEquivalent circuit
R1
IN
R2
OUT
GND
IN OUT
GND
R1=4.7k/ R2=10k
Rev.A
1/1






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DTD543XE

Digital transistors

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DTD543XM

Digital transistors

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